High Efficiency Red Phosphorescent Organic Light Emitting Diodes with Single Quantum Well Structure

Abstract

We report highly efficient red phosphorescent organic light-emitting diodes with a triplet p-i-n single quantum well (QW) structure. This p-i-n single QW structure is realized using p-doped and n-doped wide band-gap hole and electron injection and transporting layers with narrow band-gap host and dopant materials. The maximum current and power efficiencies of 11.1 cd/A and 14.4 lm/W, respectively, are demonstrated by a good carrier confinement effect of QW. Very low driving voltage characteristics of 3.7 ∼ 3.9 V at 1000 cd/m² are realized by almost no injection barrier with high conductivity configuration in our p-i-n structure.

Keywords:

• Exciton confinement
• narrow band-gap
• organic light-emitting diode
• phosphorescence
• quantum well
• wide band-gap

Acknowledgments

This work is the outcome of a Manpower Development Program for Energy & Resources supported by the Ministry of Knowledge and Economy (MKE).