Effect of Zr Addition on Sol-Gel Processed InZrZnO Thin-Film Transistor

Abstract

In this study, solution-processed InZrZnO thin films and a newly developed thin-film transistors (TFTs) were fabricated and characterized electrically. The InZrZnO TFTs were investigated according to the variation of the Zr-metal doping concentration. It was found that the off currents of InZrZnO TFTs were greatly influenced by the composition of Zr atoms suppressing formation of oxygen vacancies. The optimal transistor of InZrZnO channel layer shows good performance properties. The electrical characteristics of a 2.92 mol% Zr-doped InZnO TFT shows a field effect mobility of 0.05 cm² V⁻¹ s⁻¹, a threshold voltage of 6.1 V, an on/off ratio of 1.4 × 10⁷, and a subthreshold swing of 0.42 V/dec. The InZrZnO TFT also shows better bias stability than undoped InZnO TFT, suggesting Zr plays a key role in regards to stability of TFT.

Keywords:

• Metal oxide
• thin film transistor
• sol-gel
• inzrzno
• solution process
• AMOLED

Acknowledgment

This work was supported by DGIST R&D Program of the Ministry of Education Science and Technology of Korea (11-BD-05). We thank Dr. Bae of the Korea Basic Science Institute in Busan center for obtaining the XPS spectra.