Characteristics of Cu₂ZnSnSe₄ Film Formed by Using Co-sputtered Precursors and Selenization

Abstract

A Cu₂ZnSnSe₄ (CZTSe) film was formed by the selenization of Cu(Zn, Sn) (CZT) alloy precursors. The CZT precursor was prepared by depositing zinc onto a layer of Cu-Sn co-sputtered on molybdenum-coated soda-lime glass. Selenium was evaporated on the CZT precursor. The CZTSe film was then annealed for a minute at various substrate temperatures ranging from 350°C to 650°C in steps of 50°C in a rapid thermal process using tungsten halogen lamps. The lattice parameters of the CZTSe annealed at temperatures over 500°C were found to be a = 5.709 Å and c = 11.351 Å. We also found that the energy gap of the CZTSe was 1.137 eV, which was independent of the annealing temperature.

Keywords:

• CZTSe
• solar cell
• band gap energy

Acknowledgment

This work was supported by the DGIST R&D Program of the Ministry of Education, Science and Technology of Korea(11-BD-05).