Characteristics of Vertical Type Organic Light Emitting Transistor Using IF-dione-F as an Active Layer and DMDCNQI as a n Type Buffer Layer

Abstract

High on-off ratio, low turn-on voltage and fast response time are most critical issues in the research and development of organic transistor. In the present work, we have fabricated vertical type organic transistor using 2,8-difluoro-indeno[1,2-b]fluorine-6,12-dione (IF-dione-F) as an organic active semiconductor and DMDCNQI as a n type buffer material. IF-dione-F shows n-type semiconductor property and relatively high electron mobility. The organic light emitting transistor (OLET) configuration is ITO (drain)/PEDOT:PSS/MEH-PPV/IF-dione-F/Metal (gate)/IF-dione-F/DMDCNQI/Metal (source). The characteristics of OLET were investigated from the measurements of current-radiance voltage characteristics, electron mobility and external quantum efficiency

Keywords:

• Vertical type organic light emitting transistor
• IF-dione-F
• On-off ratio
• DMDCNQI
• Charge transfer material
• External quantum efficiency

Acknowledgments

This work was supported by the Human Resource Development of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant funded by the Korea Government Ministry of Knowledge Economy (No.20114010203090), Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (No.20100026294) and Sogang University Foundation Research Grants in 2011.