Synthesis of a Photocurable Ladder-like Poly(phenyl-co-mercaptopropyl)silsesquioxane as Gate Dielectric Material

Abstract

A new photocurable ladder-like poly(phenyl-co-mercaptopropyl)silsesquioxane (LPPMPSQ) was synthesized in one pot via base catalyzed hydrolysis-polycondensation of a comonomer mixture of phenyltrimethoxysilane and 3-mercaptopropyltrimethoxysilane. Obtained LPPMPSQ was characterized by ¹H NMR, FT-IR, ²⁹Si NMR, TGA, and the electrical (k = 3.6) and mechanical properties (surface modulus = 4.9 GPa) found to be suitable for application as a photocurable gate dielectric material.

Keywords:

• silsesquioxane
• ladder-like
• gate dielectric
• dielectric constant

Acknowledgments

This research was supported by a grant from the Fundamental R&D Program for Core Technology of Materials funded by the Ministry of Knowledge Economy, Republic of Korea and partially by the Center for Materials Architecturing of Korea Institute of Science and Technology (KIST).