Physical Properties of ZnSe Thin Films Depending on the Process Parameters

Abstract

ZnSe thin films were grown by a co-evaporation method with various Se/Zn flux ratios. In order to characterize ZnSe thin films, we performed an investigation that utilized X-Ray Diffraction (XRD), Scanning Electron Microscopy (SEM), and Ultra Violet–Visible-Near InfraRed (UV-VIS-NIR) measurements of the structural, optical, and morphological properties. XRD pole-figure analysis confirmed that the orientation of the ZnSe cubic (111) plane has been widely distributed throughout the ψ axis with respect to process conditions, flux rate of Se. It has been found that as long as the Se/Zn flux ratio is larger than 1.43, stable, single-phase, ZnSe thin films can be grown. Additional experimental data revealed that optical properties strongly depend on the substrate temperature and have correlation with crystallinity.

Keywords:

• ZnSe
• co-evaporation
• characterization

Acknowledgment

This research was financially supported by the Ministry of Knowledge Economy(MKE), Korea Institute for Advancement of Technology(KIAT) and Dae-Gyeong Leading Industry Office through the Leading Industry Development for Economic Region)