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Molecular Crystals and Liquid Crystals Volume 586, 2013 - Issue 1: Proceedings of the Advanced Display Materials and Devices 2012 (ADMD 2012)
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THIN SOLID FILM

Low Frequency Noise Characteristics on Al/Nb2O5/p-type Schottky Diode Fabricated by Pulsed DC Magnetron Sputtering

Hyun Gon Oh Department of Electronic Engineering, Myongji University, Yongin, Gyeonggi, 449-728, Republic of Korea
,
Kyung Soo Kim Department of Electronic Engineering, Myongji University, Yongin, Gyeonggi, 449-728, Republic of Korea
,
Jimi Eom Department of Electronic Engineering, Gachon University, Seongnam, 461-701, Republic of Korea
,
Sang Jik Kwon Department of Electronic Engineering, Gachon University, Seongnam, 461-701, Republic of Korea
,
Eou Sik Cho Department of Electronic Engineering, Gachon University, Seongnam, 461-701, Republic of Korea
,
Jong-Ho Lee School of Electronic Engineering and Computer Science, Seoul National University, Seoul, 151-742, Republic of Korea
&
Il Hwan Cho Department of Electronic Engineering, Myongji University, Yongin, Gyeonggi, 449-728, Republic of Korea
 show all
Pages 168-178 | Published online: 08 Jan 2014
 
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Abstract

Nb2O5films were deposited with pulsed DC magnetron sputter which is versatile and provides the ability to deposit thin film of oxide compounds with high deposition rate. Current measurement data from the metal-insulator-semiconductor (MIS) structure followed Schottky emission mechanism andreverse current characteristics were analyzed with oxygen flow rate variation. Low frequency noise measurements have been carried out with MIS samples at the forward conduction region. The experimental noise data have been successfully explained by the random walk model. The effect of O2flow rate of deposition process on low frequency noise has also been investigated and analyzed.

Acknowledgments

This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2012-0003891).

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