Photosensitive Structures of Conjugated Polymer - Porous Silicon

Abstract

The photosensitive hybrid structures poly-3,4-ethylenedioxythiophene (PEDOT)– porous silicon (PS)–n-Si are fabricated. Current-voltage characteristics of the obtained structures are investigated. It is shown that PS surface modification by PEDOT conjugated polymer gives rise to the appearance of a pronounced rectifying effect on the current-voltage characteristics. Spectral characteristics of photoresponse in the 450–1100 nm wavelength range, its temperature dependence in the 125–325 K range, and energy characteristics of the hybrid photovoltaic structures are studied. We propose possible mechanisms of the photoelectric processes in the hybrid structures PEDOT–PS–n-Si.

Keywords:

• Porous silicon
• poly(3, 4-ethylenedioxythiophene)
• CVC
• photoresponse
• spectral characteristics