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Molecular Crystals and Liquid Crystals Volume 593, 2014 - Issue 1
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LOW-DIMENSIONAL SOLIDS AND MOLECULAR CRYSTALS

Inkjet Printed Poly(3-hexylthiophene) Thin-Film Transistors: Effect of Self-Assembled Monolayer

Mengjie ChenKey Lab of Special Display Technology, Ministry of Education, National Engineering Lab of Special Display Technology, National Key Lab of Advanced Display Technology, Academy of Opto-Electronic Technology, Hefei University of Technology, Hefei, China;Key Laboratory of Advanced Functional Materials and Devices, School of Chemical Engineering, Hefei University of Technology, Hefei, China
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Rui PengKey Lab of Special Display Technology, Ministry of Education, National Engineering Lab of Special Display Technology, National Key Lab of Advanced Display Technology, Academy of Opto-Electronic Technology, Hefei University of Technology, Hefei, China;Key Laboratory of Advanced Functional Materials and Devices, School of Chemical Engineering, Hefei University of Technology, Hefei, China
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Xianfeng XiongKey Lab of Special Display Technology, Ministry of Education, National Engineering Lab of Special Display Technology, National Key Lab of Advanced Display Technology, Academy of Opto-Electronic Technology, Hefei University of Technology, Hefei, China
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Shiqin ChenKey Lab of Special Display Technology, Ministry of Education, National Engineering Lab of Special Display Technology, National Key Lab of Advanced Display Technology, Academy of Opto-Electronic Technology, Hefei University of Technology, Hefei, China;Key Laboratory of Advanced Functional Materials and Devices, School of Chemical Engineering, Hefei University of Technology, Hefei, China
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Guobing ZhangKey Lab of Special Display Technology, Ministry of Education, National Engineering Lab of Special Display Technology, National Key Lab of Advanced Display Technology, Academy of Opto-Electronic Technology, Hefei University of Technology, Hefei, China;Key Laboratory of Advanced Functional Materials and Devices, School of Chemical Engineering, Hefei University of Technology, Hefei, China
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Hongbo LuKey Lab of Special Display Technology, Ministry of Education, National Engineering Lab of Special Display Technology, National Key Lab of Advanced Display Technology, Academy of Opto-Electronic Technology, Hefei University of Technology, Hefei, China;Key Laboratory of Advanced Functional Materials and Devices, School of Chemical Engineering, Hefei University of Technology, Hefei, China
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Xianghua WangKey Lab of Special Display Technology, Ministry of Education, National Engineering Lab of Special Display Technology, National Key Lab of Advanced Display Technology, Academy of Opto-Electronic Technology, Hefei University of Technology, Hefei, ChinaCorrespondence[email protected] [email protected]
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Longzhen QiuKey Lab of Special Display Technology, Ministry of Education, National Engineering Lab of Special Display Technology, National Key Lab of Advanced Display Technology, Academy of Opto-Electronic Technology, Hefei University of Technology, Hefei, China;Key Laboratory of Advanced Functional Materials and Devices, School of Chemical Engineering, Hefei University of Technology, Hefei, ChinaCorrespondence[email protected] [email protected]
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Pages 201-213 | Published online: 27 May 2014
 
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Abstract

Organic thin film transistors (OTFTs) with bottom gate and top contact structure had been prepared by inkjet printing. It is found that the surface properties of the substrates have a great influence on the morphology of the inkjet printed droplet and film. An appropriate surface was vital to form a uniform semiconducting film by inkjet printing and also strongly improved the electric characteristics. When a bare SiO2 layer was applied, the best field-effect mobility of inkjet printed OTFT devices was only 2.37 × 10−3 cm2V−1s−1, with an on/off current ratio of 102. When the PETS treatment or the PTS treatment was applied on the SiO2 dielectric layer, the field-effect performances were substantially improved and the best field-effect mobility was enhanced to 8.07 × 10−3 cm−2V−1s−1 and 7.95 × 10−3 cm−2V−1s−1, respectively and with an on/off current ratio of 103.

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