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Abstract
We report a new polyvinyl alcohol (PVA)-tetraethoxysilane (TEOS) hybrid layer to protect an organic thin-film transistor (OTFT). PVA/TEOS hybrid thin film was successfully fabricated through hydrolysis and condensation mechanism. The surface roughness of PVA/TEOS film was measured by atomic force miscroscophy (AFM) and it showed a good surface roughness with a root-mean-squae value of about 0.23 nm. Thermally crosslinked PVA with TEOS was successfully adaped as a solution processable passivation layer for pentacene TFT. In case of well known photo-crosslinked PVA/ammonium dichromater (ADC) passivation, extremely large initial performance drop (almost 52% mobility drop) was observed after passivation. PVA/TEOS hybrid passiavtion, however, no significant initial performance drop was found after passivation process. In addition, pentacene TFT with PVA/TEOS passivation layer exhibited very stable TFT operation with almost no field mobility drop or threshold voltage shift up to 980 h.