Displacement Current Induced by Electron Spin Resonance in Organic Semiconductor

Abstract

A current induced by electron spin resonance (ESR) transitions is investigated for polymer diodes using electrically detected magnetic resonance techniques. Polymer diodes under photoexcitation are shown to exhibit a strong ESR-induced current. The ESR current exhibits a spiked time response for modulation of the resonance condition and is concluded to result from a displacement current. The magnitude of the displacement current is found to vary depending on polymers used for active layers. Trapping and de-trapping processes of carriers are expected to determine the time profile of the displacement current, suggesting that materials with shallow trap levels would be suitable for applications to spin-based devices.

Keywords:

• EDMR
• displacement current
• polymer diodes
• ESR

Acknowledgments

This work was supported in part by a Grant-in-Aid (No. 25288117) from the Japanese Ministry of Education, Culture, Sports, Science, and Technology.