Understanding of air influenced poly (3-hexylthiophene) film characteristics in a transistor structure

ABSTRACT

This study presents the air influenced electrical properties of poly (3-hexylthiophene) (P3HT) film in a transistor structure. In order to observe the effect of air exposure on P3HT films, the current–voltage characteristics of P3HT-based organic thin-film transistors (OTFTs) were obtained by increasing the air-exposure time. Upon increasing the air exposure time up to 92 h, the drain current in the saturation region increased, and a positive shift of the threshold voltage was observed. On the other hand, a decrease in the drain current and a negative shift of the threshold voltage were observed after 92 h. A simple theoretical approximation based on carrier doping and scattering effect describes the relationship between electrical performance of P3HT films and air exposure time.

KEYWORDS:

• Poly (3-hexylthiophene)
• air exposure time
• thin-film
• transistor

Acknowledgments

This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (2015R1D1A1A01057942 and 2014R1A1A2057057). This research was also supported by Hallym University Research Fund, [HRF-G-2015-1].