ABSTRACT
This work reports an efficient route for enhancing the stability of amorphous InGaZnO (a-IGZO) thin film transistors (TFTs). It is clearly observed that the off-current in IGZO-TFT decreases by using a novel Al2O3/HfO2/Al2O3 gate insulator. Temperature-stress measurement were carried out to investigate the stability and the parameters related to activation energy (EA) and density-of-states (DOS). The improved electrical properties are attributed to the suppression of leakage current and a lower trapping density at the channel-insulator interface. The results showed that temperature stability and electrical properties enhancements in a-IGZO thin film transistors can probably be ascribed to the smaller DOS.
Acknowledgement
This work is supported by the Shanghai Sailing Program (17YF1406300), Project of National Post-Doctor Fund (2015M580315) and the National Key Basic Research Program of China (2015CB655005), Science and Technology Commission of Shanghai Municipality Program (14DZ228090).