Improved ferroelectric properties of P(VDF-TrFE) and P(VDF-HFP) blends for organic memory FETs

Abstract

The electronic device industry has recently focused its attention towards the development of organic memory devices. This research highlights the development of organic memory devices by utilizing pentacene as a semiconductor and ferroelectric polymers, such as poly(vinylidene fluoride-hexafluoropropylene) [P(VDF-HFP)] and poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)], as a gate dielectric. 10 wt% solutions of P(VDF-HFP) and P(VDF-TrFE) were prepared individually and blended (50:50). The resultant solutions were coated on the gate electrode and subsequently annealed for 2 h at 90 °C. The fabricated field-effect transistors (FETs) were studied in terms of their hysteresis characteristics with particular emphasis on the memory window. The results show that the FETs fabricated using the P(VDF-HFP)/P(VDF-TrFE) blend have significantly improved memory characteristics. The enhancement in the memory characteristics is explained through the interface properties between the pentacene semiconductor and dielectric layers. This work provides a design of organic FETs with excellent memory characteristics using low-cost technology.

Keywords:

• ferroelectric
• P(VDF-TrFE)
• P(VDF-HFP)
• field effect transistor

Acknowledgement

This research work was supported by Hallym University Research Fund, 2018 (HRF-201803-014).