Inkjet-printed ZTO TFT with a combustion-processed aluminum oxide (Al₂O₃) gate dielectric

Abstract

A solution-processed aluminum oxide gate dielectric was prepared using combustion reaction for a zin-tin oxide (ZTO) thin-film transistor (TFT). Simple sol-gel processed aluminum oxide was thoroughly analyzed with respect to the process parameters to find the optimum electrical properties. A double-coated gate dielectric was employed to prepare inkjet-printed ZTO TFTs, which resulted in very high mobility compared to a spin-coated TFT. The electrical properties of the inkjet-printed ZTO TFT with double-coated gate oxide include a field effect mobility of 39.18 cm²/Vs, a threshold voltage of 1.67 V, an on-to-off current ratio of 2.13 x 10⁵, and a subthreshold slope of 0.14 V/dec.

Keywords:

• solution-process
• gate dielectric
• oxide TFTs
• inkjet printing

Acknowledgement

This work was supported by the Basic Science Research Program through the National Research Foundation (NRF-2018R1D1A1B07048441).

Additional information

Funding

This work was supported by the Basic Science Research Program through the National Research Foundation (NRF-2018R1D1A1B07048441).