Gamma-ray irradiation effects on the electrical properties of organic field-effect transistors

Abstract

We investigated the changes in the organic transistor characteristics of poly(3-hexylthiophene-2,5-diyl) (P3HT) and phenyl-C61-butyric acid methyl ester (PCBM) thin films upon high-energy gamma-ray irradiation. Devices based on both organic semiconductors showed a lower field-effect mobility and electrical current levels after gamma-ray irradiation. The threshold voltage of P3HT transistors shifted negative, while that of PCBM-based devices shifted positive. These changes in electrical performance of the devices can be utilized as a gamma-ray sensing elements.

KEYWORD:

• organic field-effect transistor
• gamma-ray irradiation
• radiation effect
• organic semiconductor
• P3HT
• PCBM

Acknowledgments

This work was supported by the National Research Foundation of Korea grant (NRF-2017M2A2A6A01021427) funded by the Ministry of Science and ICT. This research was also supported by the Chung-Ang University Research Scholarship Grants in 2017.

Additional information

Funding

This work was supported by the National Research Foundation of Korea grant (NRF-2017M2A2A6A01021427) funded by the Ministry of Science and ICT. This research was also supported by the Chung-Ang University Research Scholarship Grants in 2017.