Abstract
In the present work, the transport properties and morphology through tunneling structures were investigated, where the rough In2S3 thin films are the interfaces of these structures. In2S3 thin films were doped experimentally with Copper (Cu) and their morphology was studied by using the atomic force microscopic images at different temperatures (30, 55, 70, and 85). The results show that conductivity of the samples is strongly influenced by Cu doping content at different temperatures. Also, the transmission probability and current density of these samples were investigated numerically. The results show the maximum scattering component of transmission probability at temperature 30
for In2S3 thin films and 70
for CuIn2S3 thin films. By the results, increasing of the [Cu/In] molar ratios will lead to an increase in the transmission probability and current density of these thin films.