The Effect of Oxidation of Macroporous Silicon on Carbon Nanotubes Growth by TCVD Method

Carbon nanotubes (CNTs) were grown on deposited Ni on macroporous silicon by thermal chemical vapor deposition (TCVD) method using CH₄ as the reaction gas. Macroporous silicon was fabricated by electrochemical etching of P‐type silicon in organic electrolytes. The effect of oxidation of porous silicon (PS) on growth rate, morphology and structure of CNTs has been studied. The SEM micrographs and Raman spectra indicated that the nanotubes grown on the oxidized PS are more homogeneous and regular than those grown on the pristine PS and growth rate of CNTs grown on oxidized PS higher than those grown on pristine PS. In addition, the CNTs grown on the non‐oxidized PS have different morphology (irregular shape) and contain more amorphous carbon compare with those grown on the oxidized PS.

Keywords:

• carbon nanotube
• macroporous silicon
• thermal chemical vapor deposition

The authors would like to thank Research Council of Sharif University of Technology for financial support. The Assistances of AEOI (Karaj branch) for the cooperation, SEM analyses and Raman spectra are acknowledged.