Study on Transport Properties of Bi₂Se₃ Single Crystals Grown by Vapor Phase Technique

Abstract

Single crystals of Bi₂Se₃ were grown by vapor phase technique using ammonium chloride (NH₄Cl) as a transporting agent. The stoichiometry of the as-grown Bi₂Se₃ crystal was confirmed by energy-dispersive analysis of X-ray. The lattice parameters, crystallite size, and stacking fault probabilities were determined from X-ray powder diffractogram. The surface morphology of the as-grown single crystals was studied using AFM image. The Seebeck coefficient and resistivity variation from low (6 K) to near ambient temperature on these as-grown Bi₂Se₃ single crystals was measured. The Hall effect measurements were carried out at three different low temperatures. The obtained results are discussed in detail.

Keywords:

• Bi₂Se₃
• electrical properties
• single crystal
• vapor phase technique

Acknowledgments

All the authors are thankful to the Sophisticated Instrumentation Centre for Applied Research & Testing (SICART), Vallabh Vidyanagar, Gujarat, for EDAX and XRD analysis. The authors are also grateful to the UGC-DAE Consortium for Scientific Research, Indore Centre, India for allowing us to carry out TEP, resistivity, and AFM work on the samples.