Abstract
ZnO nanowire array films, composed of well-aligned ZnO nanowires with about 200 nm in diameter and 1 μm in length, were successfully synthesized on Mg-doped gallium nitride by hydrothermal method. The films possess quite flattened surface. In the synthesized process, there was no catalyst used. Growth conditions are comprehensively discussed in the process of aqueous solution method. It was found that the length of ZnO nanowires and the thickness of the film could be tunable by altering solution concentration and growth time. Such ZnO film assembled of vertically aligned nanowire may have potential applications as UV light-emitting diodes.