https://orcid.org/0000-0003-0143-564X
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ABSTRACT
The current study examines the influence of different hole transport layers (HTL) and electron transport layers (ETL) on an environmentally friendly CsSn0.5Ge0.5I3 based perovskite solar cell. The numerical analysis of a novel heterojunction structure of FTO/WS2/CsSn0.5Ge0.5I3/Zn3P2/Pt was done using SCAPS software. Initially, a suitable HTL (i.e. Zn3P2) and ETL (WS2) were chosen after analyzing various inorganic HTL and ETL materials. The optimized thickness values of the perovskite film and HTL layer were also measured. Different physical parameters of layers were also measured, such as defect concentration, radiative recombination, energy bandgap of the absorber layer, interface defect concentration, and series and shunt resistances. These analyses revealed that optimizing these parameters improves the electrical rendition of the Tin-Ge-based perovskite solar cell. The photovoltaic cell’s energy conversion efficiency (ECE) value increased to 26.22%, current density (Jsc) to 27.182 mA/cm2, and open-circuit voltage (Voc) to 1.116 V, and fill factor (FF) to 86.40%.
Nomenclature
| Vth | = | Thermal velocity |
| Ψ | = | Electrostatic potential |
| Eg | = | Bandgap |
| L | = | Length of diffusion |
| ECE | = | Energy Conversion Efficiency |
| Jsc | = | Current Density |
| Voc | = | Open-Circuit Voltage |
| FF | = | Fill Factor |
| Ge | = | Germanium |
| CsSn0.5Ge0.5I3 | = | Cesium Tin-Germanium triiodide |
| FTO | = | Fluorine Doped Tin Oxide |
| q | = | Charge |
| e | = | electrons |
| Ndef | = | Defect concentrations of acceptor & donor |
| G | = | Carrier generation rate |
| De & Dp | = | Coefficient diffusion of electrons/holes |
| Nt(IF) | = | Interface defect density |
| σe & σp | = | Electron/hole capture cross section rate |
| E | = | Electric field |
| D | = | Diffusion coefficient |
| χ | = | Electron affinity |
| Cc | = | Conduction Band Density of States |
| Cv | = | Valence Band Density of States |
| µe | = | Mobility of electron |
| µp | = | Mobility of holes |
| CD | = | Donor Concentration |
| CA | = | Acceptor Concentration |
| εr | = | Relative permittivity |
| Nt | = | Defect Density |
| Ec | = | Conduction Band |
| Ev | = | Valence Band |
| ni | = | Intrinsic carrier density |
| p | = | holes |
| Be & Bp | = | Electron/Hole recombination rate |
| Je & Jp | = | Current density of electrons/holes |
| Sp−1 & Se−1 | = | Recombination velocity of holes/electrons |
| ς | = | Carrier life time |
| e1 & p1 | = | Density of electron/hole in trap defect and valence band |
Disclosure statement
No potential conflict of interest was reported by the authors.
Additional information
Notes on contributors
Nitesh Kumar Singh
Nitesh Kumar Singh was born in Prayagraj (Uttar Pradesh), India on 01 Oct 1990. He graduated from the United College of Engineering & Research, Allahabad, India with B.Tech Degree in Electrical and Electronics Engineering in 2013 and completed his M.Tech Degree in Control & Instrumentation from Sam Higginbottom University of Agriculture, Technology and Sciences, Allahabad, India in 2016 & pursuing Ph.D. in NIT Delhi. He is currently Research Scholar in Electrical Engineering Department at NIT Delhi. His research interests include Solar Cell Devices, Modelling of Solar cell, Analysis of Solar Cell Design, CdTe Solar Cell, Perovskite Solar Cell, Environmental Friendly Solar Cell and Application of Renewable Energy in Power Electronics. Email id- [email protected].
Anshul Agarwal
Dr. Anshul Agarwal was graduated from the Uttar Pradesh Technical University, Lucknow, India with B.Tech degree in Electrical and Electronics Engg in 2007 and completed his M.Tech (Gold Medalist) in Power Electronics and ASIC Design in July 2009 & Ph.D. in 2013 at MNNIT, Allahabad. He is currently the faculty in Electrical Engineering Department at NIT Delhi. He was served as Assistant Professor in the National Institute of Technology Hamirpur, HP. His research interests include Power Electronic Devices, Modelling of Converters/ Inverters, AC to AC Power Conversion, Renewable Energy, Integration of Grids, Hybrid Vehicles, FPGA based Converters Design, Solar and Wind energy Integration. Dr.Anshul Agarwal has published more than 55 papers in reputed International Journals (SCI/SCIE), more than 50 papers in reputed IEEE International Conferences. He has also published two book and 25 Book chapters in different Books. He has been awarded by POSOCO Power System (PPSA-2014) for the top Ph.D research work. His 3 patents are granted and 3 are published online. He has also served as guest editor in special issue for various journals. He is active reviewer of various international conferences and reputed journals.