A high voltage NMOSFET fabricated by using a standard CMOS logic process as a pixel‐driving transistor for the OLED on the silicon substrate

Cheon An Lee Inter‐University Semiconductor Research Center and School of Electrical Engineering, Seoul National University, San 56–1, Shinlim‐dong, Kwanakgu, Seoul, 151–742, Korea Phone: +2 880–7279 Fax: +2 880–7279 E-mail: [email protected]

Sung Hun Jin Inter‐University Semiconductor Research Center and School of Electrical Engineering, Seoul National University, San 56–1, Shinlim‐dong, Kwanakgu, Seoul, 151–742, Korea

Hyuck In Kwon Inter‐University Semiconductor Research Center and School of Electrical Engineering, Seoul National University, San 56–1, Shinlim‐dong, Kwanakgu, Seoul, 151–742, Korea

Il Whan Cho Inter‐University Semiconductor Research Center and School of Electrical Engineering, Seoul National University, San 56–1, Shinlim‐dong, Kwanakgu, Seoul, 151–742, Korea

Jihye Kong Inter‐University Semiconductor Research Center and School of Electrical Engineering, Seoul National University, San 56–1, Shinlim‐dong, Kwanakgu, Seoul, 151–742, Korea

Chang Ju Lee Inter‐University Semiconductor Research Center and School of Electrical Engineering, Seoul National University, San 56–1, Shinlim‐dong, Kwanakgu, Seoul, 151–742, Korea

Myung Won Lee Inter‐University Semiconductor Research Center and School of Electrical Engineering, Seoul National University, San 56–1, Shinlim‐dong, Kwanakgu, Seoul, 151–742, Korea

Jae Woo Kyung Inter‐University Semiconductor Research Center and School of Electrical Engineering, Seoul National University, San 56–1, Shinlim‐dong, Kwanakgu, Seoul, 151–742, Korea

Jong Duk Lee Inter‐University Semiconductor Research Center and School of Electrical Engineering, Seoul National University, San 56–1, Shinlim‐dong, Kwanakgu, Seoul, 151–742, Korea

Byung‐Gook Park Inter‐University Semiconductor Research Center and School of Electrical Engineering, Seoul National University, San 56–1, Shinlim‐dong, Kwanakgu, Seoul, 151–742, Korea

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Abstract

A high voltage NMOSFET is proposed to drive top emission organic light emitting device (OLED) used in the organic electroluminescent (EL) display on the single crystal silicon substrate. The high voltage NMOSFET can be fabricated by utilizing a simple layout technique with a standard CMOS logic process. It is clearly shown that the maximum supply voltage (VDD) required for the pixel‐driving transistor could reach 45 V through analytic and experimental methods. The high voltage NMOSFET was fabricated by using a standard 1.5 μm, 5 V CMOS logic process. From the measurements, we confirmed that the high voltage NMOSFET could sustain the excellent saturation characteristic up to 50 V without breakdown phenomena.

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Notes

Student Member, KIDS.

Member, KIDS

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A high voltage NMOSFET fabricated by using a standard CMOS logic process as a pixel‐driving transistor for the OLED on the silicon substrate

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A high voltage NMOSFET fabricated by using a standard CMOS logic process as a pixel‐driving transistor for the OLED on the silicon substrate

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