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Abstract
Theoretical simulations of spatial distribution of charge carriers and recombination rate, and J‐V characteristics of the multi‐layer organic light emitting diodes are carried out. Drift‐diffusion current transport, field‐dependent carrier mobility, exponential and Gaussian trap distribution, and Langevin recombination models are included in this computer model. The simulated results show good agreement with the experimental data confirming the validity of the physical models for organic light emitting diodes.
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Student Member, KIDS
Member, KIDS
Dept. of Electrical, Information & Control Engineering, Hongik University 72–1, Sangsu‐dong, Mapo‐gu, Seoul, 121–791, Korea
Samsung SDI 428–5, Gongse‐dong, Giheung‐gu, Yongin‐si, Gyeonggi‐do, 446–577, Korea
Research Institute of Information Display, Hanyang University 17, Haengdang‐dong, Seongdong‐gu, Seoul, 133–791, Korea
Dept. of Electrical, Information & Control Engineering, Hongik University 72–1, Sangsu‐dong, Mapo‐gu, Seoul, 121–791, Korea