Abstract
The purpose of the present paper is to study the gravitational effect in a homogeneous isotropic semiconducting medium subjected to an internal heat source, based on Lord–Shulman theory. The problem is formulated in the dimensionless form and then solved analytically using the normal mode analysis method. The physical quantities are obtained and tested by a numerical study using the parameters of silicon as a target and presented graphically. The distribution of these quantities is represented graphically in the presence and absence of the internal heat source as well as gravity.