Elastic-thermal-diffusion model with a mechanical ramp type and variable thermal conductivity of electrons–holes semiconductor interaction

Abstract

In this article, an elastic-thermodiffusion (ETD) model in the context of the coupled between the holes and electrons is constructed for the semiconductor material. The photothermal excitation in generalized thermoelasticity theory is used to describe this model. The governing equations are studied when the thermal conductivity is variable during the temperature graduation. The deformation occurrs in one-dimensional (1D) when thermoelastic (TD) and electronic(ED) transport processes are taken into consideration. The dimensionless field quantities are obtained analytically for the principle physical fields (hole charge field carrier, elastic, thermal, and electrons charge carrier density (plasma) waves). Laplace transform is used algebraically to solve the governing equations. When some conditions are taken at the boundary, the main physical fields are obtained and subjected to mechanical ramp type at rest. Laplace inverse with the approximate technique is used numerically during the transformation to get the closed-form in the time domain for the principle fields. Some comparisons are carried out graphically under the effect of variable thermal conductivity and thermal memories which are discussed for silicon material.

KEYWORDS:

• Electrons and holes
• mechanical ramp type
• plasma
• variable thermal conductivity
• photothermal excitation
• semiconductors

Disclosure statement

No potential conflict of interest was reported by the author(s).

Data availability statement

The information applied in this research is ready from the authors at request.