A Simple structure with low temperature drift bandgap voltage reference design

ABSTRACT

Due to the dilemma between the temperature coefficient and the structural complexity of the traditional bandgap voltage reference, a simple bandgap voltage reference with low temperature coefficient is proposed in this paper. Based on the Brokaw bandgap circuit structure, making the structural innovation. The requirement of the traditional structure for high gain amplifier is abandoned and the current mirror structure is used to realise the current proportional relation, which simplifies the circuit structure. The negative feedback path makes the results more accurate. Intriguingly, under 3.3 V power supply voltage, using TSMC 0.18 μm CMOS process, SPECTRE simulation results show that when the temperature of the output voltage of the bandgap voltage reference is −65°C ~ 150°C, the temperature coefficient is 12.79 ppm/°C, and the PSRR is 79.85 dB, noise is 5.636 UV and start-up time is 200 ns.

KEYWORDS:

• Bandgap voltage reference
• Brokaw-type bandgap
• simple structure
• low temperature drift

Disclosure statement

No potential conflict of interest was reported by the author(s).

Additional information

Funding

This research was funded by Shandong Provincial Natural Science Foundation.