ABSTRACT
The Nebulized Spray Pyrolysis (NSP) process has created Sn-doped In2S3 thin films for various molar percentages on micro glass substrates. The structural, optical, morphological, and electrical characteristics of the thin films have all been studied. A cubic phase had formed in each of the deposited films, according to an X-ray diffraction analysis. The average transmittance of the films ranged from 75 to 96%, while the bandgap energies for direct permitted transitions varied from 2.32 to 2.77 eV. The Scanning Electron Microscopy (SEM) images showed the rock-plate type nanoparticles grown over the surface of the glass plates. The Hall effect study revealed the n-type conductivity and with a 3 mol% Sn-doped In2S3 thin film exhibited a carrier concentration of 17.36 × 1018 cm−3 with the lowest resistance of 21.6 Ω-cm.
Acknowledgements
We acknowledge that Dr. N. Gopalakrishnan, an Associate professor in the Physics department at NIT Tiruchirappalli, India, utilised a Hall measuring apparatus to analyse the electrical characterisation. The authors are highly thankful to Prof. C. Sanjeeviraja, Emeritus Scientist, Alagappa University, Karaikudi for his excellent suggestions.
Disclosure statement
No potential conflict of interest was reported by the author(s).
Author contribution statement
S. Sahul Hameed | = | Investigation, Methodology, Writing – original draft |
L. Amalraj | = | Methodology, Conceptualization, Data curation. |
B. Balayazhini | = | Writing – review & editing. |
S. Syed Zahirulla | = | Review & editing. |
J. Raj Mohamed | = | Investigation, Methodology |
Data availability statement
Manuscript data will be available on request.