Effect of nitro substitution of azo-chalcone derivatives nano film on electrical memory properties

Abstract

A nitro substituted azo-chalcone derivative 3-(4-(dimethylamino) phenyl) diazenyl)phenyl)-1-(4-nitrophenyl) prop-2-en-1-one (AZOC-4N) and a reference compound 3-(4-(dimethylamino) phenyl) diazenyl) phenyl)-1-phenylprop-2-en-1-one (AZOC-H) were synthesized by Claisen Schmidt reaction. Thermogravimetry, UV-vis and cyclic voltammetry were used to study the influence of the introduction of nitro in the conjugated molecule AZOC-4N on the photoelectric properties. The active layer was further prepared by solution spin coating, and the morphology of the film was characterized by AFM. The electrical memory performance of the device is studied. It is found that the device has the nonvolatile binary write once read many (WORM) memory performances, and the threshold voltage of the device prepared by introducing nitro group into the molecule is lower—1.4 V. Finally, the electrical memory performance of the device is analyzed by theoretical calculation.

Keywords:

• Azo-chalcone derivative
• WORM memory
• threshold voltage
• electrical memory

Additional information

Funding

This work is supported by the team of syngas catalytic conversion of Shaanxi University of Technology, the national natural science foundation of China (project no. 21373132, 21603133, 21807068), Key scientific research project of education department of Shaanxi province (18JS023, 19JK0187), Shaanxi provincial science and technology department project (2019JQ149, 2019JQ060, 2019JQ526, 2019JM471), the Young Talent fund of University Association for Science and Technology in Shaanxi, China (20180607) and the doctor research start foundation of Shaanxi University of Technology (SLGQD2017-14, SLGQD17-15).