ABSTRACT
High-energy ion implantation in silicon leads to the formation of defects around the mean projected ion range R p. These defects are capable of collecting unwanted impurities like metal atoms. A similar effect has been observed in the depth range around half of the projected ion range, R p/2. This gettering ability around R p/2 is supposed to rely on excess vacancies, generated by the implantation process itself. SIMS is a preferential tool in the detection of gettering centres: If copper is applied at the backside of the sample and trapped in the gettering layers during annealing, enrichments of copper in certain areas can be seen in SIMS depth profiles Citation[1]. If the R p/2-effect was caused by excess vacancies, then one attempt to remove these additional gettering centres would be to implant additional Si atoms which could recombine with the vacancies: In order to test this assumption, three Si+ implanted samples were implanted with additional Si+ ions having a projected range that corresponds to R p/2. After application of copper and annealing, the copper distribution was investigated by SIMS. Furthermore a low-energy-He+-implanted silicon wafer was examined, showing that He+ implantation not only leads to an accumulation of metals but also of oxygen in the R p and R p/2 range.