Effects of coupling agent thickness on residual stress in polyimide/γ-APS/silicon wafer j oints

D.I. Kong Polymer Research Institute, Department of Chemical Engineering, School of Environmental Engineering, Pohang University of Science and Technology, Pohang 790-784, Korea

C.E. Park Polymer Research Institute, Department of Chemical Engineering, School of Environmental Engineering, Pohang University of Science and Technology, Pohang 790-784, Korea

S.T. Hong Department of Mechanical Engineering, Pohang University of Science and Technology, Pohang 790-784, Korea

H.C. Yang Department of Mechanical Engineering, Pohang University of Science and Technology, Pohang 790-784, Korea

K.T. Kim Department of Mechanical Engineering, Pohang University of Science and Technology, Pohang 790-784, Korea

Abstract

The adhesion strength of and the residual stress in pyromellitic dianhydride-4,4'-oxydianiline polyimide (PMDA-ODA PI)/y-APS/silicon wafer joints were investigated for various coating thicknesses of γ-aminopropyltriethoxysilane (γ-APS). The largest adhesion strength (780 N/m) was observed in the joint with 11 nm of γ-APS coating thickness. The residual stress was measured by a He-Ne laser thin film stress analyzer and calculated by a finite element analysis. The residual bending stresses obtained by finite element calculations agreed very well with the experimental results. Residual stress increased with increasing γ-APS coating thickness.

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Effects of coupling agent thickness on residual stress in polyimide/γ-APS/silicon wafer j oints

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Effects of coupling agent thickness on residual stress in polyimide/γ-APS/silicon wafer j oints

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