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Abstract
Experimental and theoretical investigations have been carried out to determine the effect of the interface on the back scattered field of a loop metallic antenna and an oscillator with a nonlinear local load (in the form of a semiconductor diode) placed in the dielectric near the boundary. The growth of the scattered signal level is noted at the limits of the quasi-static zone with an increase in the distance between the nonlinear scatterer and the boundary. With a further increase in this distance, the indicated dependence has an oscillating characteristic.