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Materials Research Innovations Volume 19, 2015 - Issue sup9: 2015 International Conference on Materials Science (ICMS2015)
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Research Papers

Modelling and simulation of effects of the content of Zn and the thickness of CdZnTe on the performance of Au/CdZnTe/glass radiation detector using Silvaco TCAD

Y. ZhangSchool of Materials Science and EngineeringShanghai University, Shanghai200444, PR China
,
L. WangSchool of Materials Science and EngineeringShanghai University, Shanghai200444, PR ChinaCorrespondence[email protected]
,
K. QinSchool of Materials Science and EngineeringShanghai University, Shanghai200444, PR China
,
R. XuSchool of Materials Science and EngineeringShanghai University, Shanghai200444, PR China
,
J. LaiSchool of Materials Science and EngineeringShanghai University, Shanghai200444, PR China
,
J. HuangSchool of Materials Science and EngineeringShanghai University, Shanghai200444, PR China
,
J. ZhangSchool of Materials Science and EngineeringShanghai University, Shanghai200444, PR China
,
J. MinSchool of Materials Science and EngineeringShanghai University, Shanghai200444, PR China
&
Y. XiaSchool of Materials Science and EngineeringShanghai University, Shanghai200444, PR China
 show all
Pages S9-14-S9-16 | Received 16 Dec 2014, Accepted 26 Jan 2014, Published online: 23 Nov 2015
 
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Abstract

The photoelectric property of Au/CdZnTe/glass radiation detectors has been simulated by Silvaco TCAD tools. The effect of Zn content on the photo-current of detectors is studied, and it is found that the detector has good spectral responses and the photo-current will increase with the Zn concentration. Especially, under near ultraviolet (NUV) light irradiation (200–400 nm), the photo-current increases by two to four orders of magnitude. Considering the effect of the CdZnTe thickness on the electric field and potential, a thickness of 150 μm is the best choice to collect photo-generated carriers.

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