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Abstract
Silicon dioxide approached death end lifetime <1·0 nm thickness. Therefore, further scaling of metal oxide semiconductor devices required new oxide films (high-k) that are able to overcome the problems associated with gate leakage current, threshold shift, associated device power consumption and reliability. In this paper, zirconium dioxide (ZrO2) one of the promising high-k dielectric films is studied. Capacitance voltage measurements were carried out to investigate properties such as oxide charges and interface trap charges that exist in the dielectric. In addition, post metal annealing using forming gas at 380°C was conducted on the metal oxide semiconductor capacitors for better understanding of the dielectric charge properties. It was concluded that the zirconium dioxide has low oxide and interface charges. The reduction of oxide and interface charges by annealing is possible provided that the time taken for the annealing process is well controlled.
