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Abstract
Hydrogen doped In2O3 (In2O3:H) films show high conductivity, small dispersion of refractive index and very low extinction coefficient in the visible to near infrared wavelengths. The improved properties make this transparent conducting oxide an ideal candidate for a window electrode of optoelectronic devices. This article describes the control of microstructure of In2O3:H, the relationship between the structure and transport properties and the Si based solar cells incorporating the In2O3:H window electrode.
The authors would like to thank RASIRC founder J. Spiegelman, Mr K. Sugihara, Mr N. Tomita and Mr M. Tada of Taiyo Nippon Sanso Corporation for their technical advice on the controlled delivery of water vapour in the growth chamber using the humidification system. This work was supported by the New Energy and Industrial Technology Development Organization (NEDO) under the Ministry of Economy, Trade and Industry (METI), Japan.