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Surface Engineering Volume 32, 2016 - Issue 1
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Original Article

MOCVD growth and study of magnetic Co films

S. I. DorovskikhNikolaev Institute of Inorganic Chemistry, Siberian Branch of Russian Academy of Sciences, aven. Lavrentiev 3, Novosibirsk630090, RussiaCorrespondence[email protected]
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R. R. HairullinInstitute of Strength Physics and Materials Science, Siberian Branch of Russian Academy of Science, 2/1 Akademicheskii pr., Tomsk634021, Russia;National Research Tomsk Polytechnic University, 30 Lenina av., Tomsk634050, Russia
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S. V. SysoevNikolaev Institute of Inorganic Chemistry, Siberian Branch of Russian Academy of Sciences, aven. Lavrentiev 3, Novosibirsk630090, Russia
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V. V. KriventsovBoreskov Institute of Catalysis, Siberian Branch of Russian Academy of Sciences, aven. Lavrentiev 5, Novosibirsk630090, Russia
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A. V. PaninInstitute of Strength Physics and Materials Science, Siberian Branch of Russian Academy of Science, 2/1 Akademicheskii pr., Tomsk634021, Russia
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Y. V. ShubinNikolaev Institute of Inorganic Chemistry, Siberian Branch of Russian Academy of Sciences, aven. Lavrentiev 3, Novosibirsk630090, Russia;Novosibirsk State University, Pirogova Str. 2, Novosibirsk630090, Russia
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N. B. MorozovaNikolaev Institute of Inorganic Chemistry, Siberian Branch of Russian Academy of Sciences, aven. Lavrentiev 3, Novosibirsk630090, Russia
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N. V. GelfondNikolaev Institute of Inorganic Chemistry, Siberian Branch of Russian Academy of Sciences, aven. Lavrentiev 3, Novosibirsk630090, Russia
&
S. V. KorenevNikolaev Institute of Inorganic Chemistry, Siberian Branch of Russian Academy of Sciences, aven. Lavrentiev 3, Novosibirsk630090, Russia;Novosibirsk State University, Pirogova Str. 2, Novosibirsk630090, Russia
 show all
Pages 8-14 | Received 14 Aug 2014, Accepted 13 Nov 2014, Published online: 27 Nov 2014
 
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Abstract

The Co(N’acN’ac)2 complex, namely bis(2-methylamino-4-methyliminato-penten) cobalt(II), was for the first time used as a precursor for producing Co films via metal–organic chemical vapour deposition. This chelate exhibits good volatility ln (P/P°) = 26·45–14006·7/T(K) at moderate temperature values (382–427 K). Co films were grown on Si (100) substrates and studied by X-ray diffraction, extended X-ray absorption fine structure, atomic force and scanning electron microscopy, energy dispersive X-ray analysis and optical profilometry. Deposition conditions corresponding to the optimal electrical and magnetic characteristics of Co thin films are found.

Acknowledgment

The Co films were deposited using a MOCVD apparatus we have modified under the support of the Ministry of Education and Science of the Russian Federation Agreement No 14. 604.21.0080 from 30 june 2014, personal identifier ASI RFMEFI60414X0081.

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