Properties of Al doped CdZnTe film by aluminium induced crystallisation

Abstract

Al doped CdZnTe film was prepared by radio frequency magnetron sputtering with aluminium induced crystallisation. Structural and electric properties of Al doped CdZnTe film were studied. Al doped CdZnTe film has a preferred [111] orientation with uniform pebble-like grain structure, and the leakage current is 2·3 × 10^− 8 A. Current conduction mechanism in Al doped CdZnTe film has been investigated and analysed. Space charge limited current emission is found to be the dominant mechanism in Al doped CdZnTe film, which was associated with trapping process of Cd vacancies.

Keywords:

• Magnetron sputtered
• Al doped CdZnTe
• Current conduction mechanisms

Acknowledgements

This work was supported by the National Natural Science Foundation of China (grant no. 51002012) and Beijing Institute of Petrochemical Technology Breeding Project of Outstanding Young Teachers and Management Backbones (grant no. BIPT-BPOYTMB-2014).