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Materials Technology
Advanced Performance Materials
Volume 28, 2013 - Issue 6
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Technical note

Influence of oxygen vacancy on resistive switching property of Ag/Nb:SrTiO3/Ti structure

J X Shen Department of PhysicsCenter for Optoelectronics Materials and Devices, Zhejiang Sci-Tech University, Hangzhou310018, China
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H Q Qian Department of PhysicsCenter for Optoelectronics Materials and Devices, Zhejiang Sci-Tech University, Hangzhou310018, China
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Y Zhang Department of PhysicsCenter for Optoelectronics Materials and Devices, Zhejiang Sci-Tech University, Hangzhou310018, China
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G F Wang Department of PhysicsCenter for Optoelectronics Materials and Devices, Zhejiang Sci-Tech University, Hangzhou310018, China
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J Q Shen Department of PhysicsCenter for Optoelectronics Materials and Devices, Zhejiang Sci-Tech University, Hangzhou310018, China
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S L Wang Department of PhysicsCenter for Optoelectronics Materials and Devices, Zhejiang Sci-Tech University, Hangzhou310018, China
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C Cui Department of PhysicsCenter for Optoelectronics Materials and Devices, Zhejiang Sci-Tech University, Hangzhou310018, China
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P G Li Department of PhysicsCenter for Optoelectronics Materials and Devices, Zhejiang Sci-Tech University, Hangzhou310018, China
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M Lei State Key Laboratory of Information Photonics and Optical CommunicationBeijing University of Posts and Telecommunications, Beijing100876, China; School of ScienceBeijing University of Posts and Telecommunications, Beijing100876, ChinaCorrespondence[email protected]
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W H Tang State Key Laboratory of Information Photonics and Optical CommunicationBeijing University of Posts and Telecommunications, Beijing100876, China; School of ScienceBeijing University of Posts and Telecommunications, Beijing100876, China
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Pages 375-379 | Received 17 Nov 2012, Accepted 20 Mar 2013, Published online: 18 Nov 2013
 
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Abstract

With the aim to get optimised resistive switching properties, the influence of oxygen vacancy concentration of Nb:SrTiO3 (NSTO) on the resistive switching properties of Ag/NSTO/Ti structure was studied. To obtain the NSTO with different oxygen vacancy concentrations, the substrates had been annealed in different atmospheres and temperatures before they were used to fabricate Ag/NSTO/Ti structure. The resistive switching properties were investigated by measuring I–V characteristics, endurance ability and resistance distribution at room temperature. The results show that both annealing in oxygen atmosphere and vacuum atmosphere degraded the switching properties. In our case, the device annealed in air at 700°C displayed the best resistive switching behaviour. After analysis, we suggest that both Schottky barrier height and barrier width, which can be tuned by changing the oxygen vacancy concentration, play important roles in getting high quality resistive switching property.

This work was supported by the National Basic Research Program of China (973 Program) (grant no. 2010CB933501) and the National Natural Science Foundation of China (grant nos. 51072182, 51172208, 61274009 and 51202218).

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