Ion implantation doping of semiconductors

Abstract

An overview of the use of ion implantation to dope silicon and gallium arsenide is presented. The problems associated with epitaxial regrowth in the solid phase and annealing, including rapid thermal annealing, are discussed in detail. Channelling, prior amorphisation, very high energy (Me V) implants, and silicon-on-insulator structures are highlighted as topics that could influence the fabrication of future integrated circuits. The applications of ion implantation to device fabrication are also briefly reviewed.

MST/794