191
Views
17
CrossRef citations to date
0
Altmetric
21st Century COE Program, University of Tsukuba - Promotion of Interdisciplinary Materials Science for Novel Functions

Optical processes of red emission from Eu doped GaN

, , &
Pages 644-648 | Received 29 Mar 2005, Accepted 25 Jul 2005, Published online: 26 Oct 2005

References

  • S.C. Jain, M. Willander, J. Narayan, R. Van Overstraeten, III-Nitrides: growth, characterization, and properties, J. Appl. Phys. 87 (2000) 965–1006.
  • H.J. Lozykowski, W.M. Jadwisienczak, I. Brown, Photoluminescence and cathodeluminescence of GaN doped with Pr, J. Appl. Phys. 88 (2000) 210–222.
  • Se-young Seo, Jung H. Shin, Carrier induced Er3C luminescence quenching of erbium-doped silicon-rich silicon oxide, Appl. Phys. Lett. 75 (1999) 4070–4072.
  • H.J. Lozykowski, W.M. Jadwisienczak, J. Han, I.G. Brown, Luminescence properties of GaN and Al0.14Ga0.86N superlattice doped with europium, Appl. Phys. Lett. 77 (2000) 767–769.
  • M.J. Weber, Radiative and multiphonon relaxations of rare-earth ions in Y2O3, Phys. Rev. 171 (1968) 283–291.
  • S.J. Peaton, U. Hommerich, J.T. Seo, R.G. Wilsou, J.M. Zavada, Er doping of GaN during growth by metalorganic molecular beam epitaxy, Appl. Phys. Lett. 72 (1998) 2710–2712.
  • H.J. Lozykowski, W. Jadwisienczak, I. Brown, Visible cathodeluminescence of GaN doped with Dy, Er, and Tm, Appl. Phys. Lett. 74 (1999) 1129–1131.
  • A.J. Steckl, M. Garter, D.S. Lee, J. Heikenfeld, R. Birkhahn, Blue emission from Tm-doped GaN electroluminescent devices, Appl. Phys. Lett. 75 (1999) 2184–2186.
  • K. Hara, N. Ohatake, K. Ishi, Green emission from Tb-doped GaN grown by MOVPE, phys, Phys. Status Solidi B 216 (1999) 625–628.
  • H. Bang, S. Morishima, T. Maruyama, K. Akimoto, M. Nomura, E. Yagi, Growth and Characterization of Tb-doped GaN, in Proceedings of the International Workshop on Nitride Semiconductors, IPAP Conference Series, vol. 1, 2000, pp. 494–497.
  • T. Maruyama, H. Sasaki, S. Morishima, K. Akimoto, Red emission from Eu-doped GaN studied by photoluminescence and photo-carolimetric spectroscopy, Jpn. J. Appl. Phys. 38 (1999) L1306–L1308.
  • S. Morishima, T. Maruyama, M. Tanaka, Y. Masumoto, K. Akimoto, Growth of Eu-doped GaN and electroluminescence from MIS structure, Phys. Status Solidi A 176 (1999) 113–117.
  • T. Maruyama, H. Sasaki, S. Morishima, K. Akimoto, Emission efficiency of undoped and Eu-doped GaN determined by photocalorimetric spectroscopy, Phys. Status Solidi B 216 (1999) 629–632.
  • D.S. Lee, J. Heikenfeld, R.B. Birkhahn, M. Garter, B.K. Lee, A.J. Steckl, Voltage-controlled yellow or orange emission from GaN codoped with Er and Eu, Appl. Phys. Lett. 76 (2000) 1525–1527.
  • A.J. Steckl, M. Garter, D.S. Lee, J. Heikenfeld, R.B. Birkhahn, Blue emission from Tm-doped GaN electroluminescent devices, Appl. Phys. Lett. 75 (1999) 2184–2187.
  • R. Singh, D. Doppalapudi, T.D. Moustakas, L.T. Romano, Phase separation in InGaN thick films and formation of InGaN/GaN double heterostructures in the entire alloy composition, Appl. Phys. Lett. 70 (1997) 1089–1091.
  • H. Bang, S. Morishima, J. Sawahata, J. Seo, M. Takiguchi, M. Tsunemi, K. Akimoto, Concentration quenching of Eu-related luminescence in Eu-doped GaN, Appl. Phys. Lett. 85 (2004) 227–229.
  • S. Morishima, T. Maruyama, K. Akimoto, Epitaxial growth of Eu-doped GaN by gas source molecular beam epitaxy, J. Cryst. Growth 209 (2000) 378–381.
  • T. Hoshina, S. Imanaga, S. Yokono, Charge transfer effects on the luminescent properties of Eu3C in oxysulfides, J. Lumin. 15 (1977) 455–471.
  • M.T. Berry, P.S. May, H. Xu, Temperature dependence of the Eu3C 5D0 lifetime in europium tris(2,2,6,6-tetramethyl-3,5-heptanedionato), J. Phys. Chem. 100 (1996) 9216–9222.
  • W. Fuhs, I. Ulber, G. Weiser, M.S. Bresler, O.G. Gusev, A.N. Kuznetsov, V.Kh. Kudoyarova, E.I. Terukov, I.N. Yassievich, Excitation and temperature quenching of Er-induced luminescence in a-Si:H(Er), Phys. Rev. B56 (1997) 9545–9551.
  • I. Yassievich, M. Bresler, O. Gusev, Defect-related Auger excitation of erbium ions in amorphous silicon, J. Non-Cryst. Solids 226 (1998) 192–199.
  • H. Kuhne, G. Weiser, E.I. Terukow, A.N. Kusnetsov, V. Kudoyarova, Resonant nonradiative energy transfer to erbium ions in amorphous hydrogenated silicon, J. Appl. Phys. 86 (1999) 896–901.
  • I. Tsimperidis, T. Gregorkiewicz, H. Bekman, C. Langerak, Direct observation of the two-stage excitation mechanism of Er in Si, Phys. Rev. Lett. 81 (1998) 4748–4751.
  • J. Palm, F. Gan, B. Zheng, J. Michel, L. Kimerling, Electroluminescence of erbium-doped silicon, Phys. Rev. B54 (1996) 17603–17615.
  • T. Gregorkiewicz, D. Thao, J. Langer, H. Bekman, M. Bresler, J. Michel, L. Kimerling, Energy transfer between shallow centers and rare-earth ion cores: Er3C ion in silicon, Phys. Rev. B61 (2000) 5369–5375.
  • G.H. Dieke, Spectra and Energy Levels of Rare Earth Ions in Crystals, Wiley, New York, NY, 1968, p. 242.
  • A. Taguchi, K. Takahei, Trap level characteristics of rare-earth luminescence centers in III–V semiconductors, J. Appl. Phys. 79 (1996) 4330–4334.
  • D.W. Elsaesser, J.E. Colin, Y.K. Yeo, R.L. Hengehold, K.R. Evans, J.S. Solomon, Erbium complexes and defect levels in MBE-grown erbium-doped GaAs and AlGaAs, J. Cryst. Growth 127 (1993) 707–710.
  • D. Seghier, T. Banyattou, A. Kalboussi, S. Moneger, G. Guillot, B. Lambert, A. Guivarch, Optical and electrical properties of rare earth (Yb,Er) doped GaAs grown by molecular beam epitaxy, J. Appl. Phys. 75 (1994) 4171–4175.

Reprints and Corporate Permissions

Please note: Selecting permissions does not provide access to the full text of the article, please see our help page How do I view content?

To request a reprint or corporate permissions for this article, please click on the relevant link below:

Academic Permissions

Please note: Selecting permissions does not provide access to the full text of the article, please see our help page How do I view content?

Obtain permissions instantly via Rightslink by clicking on the button below:

If you are unable to obtain permissions via Rightslink, please complete and submit this Permissions form. For more information, please visit our Permissions help page.