13.56 and 100 MHz Coupled Mode Rf-Sputtering for Ferroelectric Sr₂(Ta_{1 − x},Nb_x)₂O₇ (STN) Film Applied to One-Transistor Type Ferroelectric Random Access Memory

Ichirou Takahashi New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aza Aoba, Aramaki, Aoba-ku, Sendai, 980-8579, Japan

Masaki Hirayama New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aza Aoba, Aramaki, Aoba-ku, Sendai, 980-8579, Japan

Yasuyuki Shirai New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aza Aoba, Aramaki, Aoba-ku, Sendai, 980-8579, Japan

Akinobu Teramoto New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aza Aoba, Aramaki, Aoba-ku, Sendai, 980-8579, Japan

Shigetoshi Sugawa Graduate School of Engineering, Tohoku University, 6-6-11 Aza Aoba, Aramaki, Aoba-ku, Sendai, 980-8579, Japan

Tadahiro Ohmi New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aza Aoba, Aramaki, Aoba-ku, Sendai, 980-8579, Japan

References

Takahashi , I. , Sakurai , H. , Yamada , A. , Funaiwa , K. , Hirai , K. , Urabe , S. , Goto , T. , Hirayama , M. , Teramoto , A. , Sugawa , S. and Oohi , T. 2003 . Jpn. J. Appl. Phys. , 42 : 2050
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Takahashi , I. , Sakurai , H. , Yamada , Y. , Funaiwa , K. , Hirai , K. , Urabe , S. , Goto , T. , Hirayama , M. , Teramoto , A. , Sugawa , S. and Ohmi , T. 2003 . Appl. Surf. Sci. , 216 : 329
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Takahashi , I. , Sakurai , H. , Isogai , T. , Hirayama , M. , Teramoto , A. , Sugawa , S. and Ohmi , T. 2006 . Jpn. J. Appl. Phys. , 45 : 3207
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13.56 and 100 MHz Coupled Mode Rf-Sputtering for Ferroelectric Sr₂(Ta_{1 − x},Nb_x)₂O₇ (STN) Film Applied to One-Transistor Type Ferroelectric Random Access Memory

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13.56 and 100 MHz Coupled Mode Rf-Sputtering for Ferroelectric Sr2(Ta1 − x,Nbx)2O7 (STN) Film Applied to One-Transistor Type Ferroelectric Random Access Memory

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13.56 and 100 MHz Coupled Mode Rf-Sputtering for Ferroelectric Sr₂(Ta_{1 − x},Nb_x)₂O₇ (STN) Film Applied to One-Transistor Type Ferroelectric Random Access Memory