References
- Qi , X. D. , Wei , M. , Lin , Y. and Jia , Q. X. 2005 . High-resolution x-ray diffraction and transmission electron microscopy of multiferroic BiFeO3 films . Appl. Phys. Lett. , 86 : 071913
- Singh , S. K. and Ishiwara , H. 2006 . Micro-structure and ferroelectric properties of BiFeO3 thin films formed on Pt-coated r-plane sapphire substrates . J. Electroceramics , 16 : 553
- Eerenstein , W. , Mathur , N. D. and Scott , J. F. 2006 . Multiferroic and magnetoelectric materials . Nature , 442 : 759
- Fiebig , M. 2005 . Revival of the magnetoelectric effect . J. Phys. D , 38 : R123
- Wang , J. and Neaton , J. B. 2003 . Epitaxial BiFeO3 multiferroic thin film heterostructures . Science , 299 : 1719
- Haratake , K. , Shigemitsu , N. , Nishijama , M. and Yoshimura , T. 2005 . Low-Temperature growth and characterization of epitaxial YMnO3/Y2O3/Si MFIS capacitors with thinner insulator layer . Jpn. J. Appl. Phys., Part 1 , 44 : 6977
- Takahashi , K. , Aizawa , K. , Park , B. E. and Ishiwara , H. 2005 . Thirty-Day-Long data retention in ferroelectric-gate field-effect transistors with HfO2 buffer layers . Jpn. J. Appl. Phys., Part 1 , 44 : 6218
- Lan , B. C. , Huang , C. Y. and Chen , S. Y. 2003 . Physical characteristics and electrical properties of Sr0.8Bi2 + x Ta2O9 films on Al2O3/Si annealed at high temperature . J. Appl. Phys. , 94 : 6735
- Tokumitsu , E. , Nakamura , R. and Ishiwara , H. 1997 . Nonvolatile memory operations of metal-ferroelectric-insulator-semiconductor (MFIS) FETs using PLZT/STO/Si(100) structures . IEEE Electron Device Lett. , 18 : 160
- Juan , P. C. , Chang , C. Y. and Lee , Y. M. 2006 . A new metal-ferroelectric (PbZr0.53Ti0.47O3)-insulator (Dy2O3)-semiconductor (MFIS) FET for nonvolatile memory applications . IEEE Electron Device Lett. , 27 : 217
- Liu , C. H. , Wu , J. M. and Wu , L. J. 2006 . Characteristics of metal-ferroelectric-insulator-silicon structures with ferroelectric (Pb0.8Ba0.2)ZrO3 thin films and (Ba0.5Sr0.5)TiO3 buffer layer . Appl. Phys. Lett. , 88 : 122901
- Lin , C. M. , Shih , W. C. and Chang , I. Y. 2009 . Metal-ferroelectric (BiFeO3)-insulator (Y2O3)-semiconductor capacitors and field effect transistors for nonvolatile memory applications . Appl. Phys. Lett. , 94 : 142905
- Houssa , M. 2004 . High-κ Gate Dielectrics , Berkshire : Institute of Physics, University of Reading .
- Lee , S. K. , Kim , Y. T. and Kim , S. I. 2002 . Effects of coercive voltage and charge injection on memory windows of metal-ferroelectric-semiconductor and metal-ferroelectric-insulator-semiconductor gate structures . J. Appl. Phys. , 91 : 9303