Advanced search
Publication Cover
Ferroelectrics Volume 410, 2010 - Issue 1
Submit an article Journal homepage
224
Views
1
CrossRef citations to date
0
Altmetric
SECTION L: MEMORY, MEMS AND OTHER INTEGRATED DEVICES

HfO2-TiO2 Ultra-Thin Gate Dielectric by RF Sputtering

G. X. Li Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an, 710049, China
,
X. F. Chen Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an, 710049, China; Microelectronics Centre, School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore, 639798
,
W. Ren Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an, 710049, China
,
P. Shi Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an, 710049, China
,
X. Q. Wu Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an, 710049, China
,
O. K. Tan Microelectronics Centre, School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore, 639798
,
W. G. Zhu Microelectronics Centre, School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore, 639798
&
X. Yao Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an, 710049, China
 show all
Pages 129-136 | Received 23 Aug 2009, Accepted 18 Oct 2009, Published online: 20 Jan 2011

References

  • Wilk , G. D. , Wallace , R. M. and Anthony , J. M. 2001 . High-kappa gate dielectrics: Current status and materials properties considerations . J. Appl. Phys. , 89 : 5243 – 5275 .
  • Chen , F. , Bin , X. , Hella , C. , Shi , X. , Gladfelter , W. L. and Campbell , S. A. 2004 . A study of mixtures of HfO2 and TiO2 as high-k gate dielectrics . Microelectronic. Eng. , 72 : 263 – 266 .
  • Triyoso , D. H. , Hegde , R. I. , Zollner , S. , Ramon , M. E. , Kalpat , S. , Gregory , R. , Wang , X. D. , Jiang , J. , Raymond , M. , Rai , R. , Werho , D. , Roan , D. , White , B. E. and Tobin , P. J. 2005 . Impact of titanium addition on film characteristics of HfO2 gate dielectrics deposited by atomic layer deposition . J. Appl. Phys. , 98 : 054104
  • Lin , L. M. and Lai , P. T. 2007 . Improved high-field reliability for a SiC metal-oxide- semiconductor device by the incorporation of nitrogen into its HfTiO gate dielectric . J. Appl. Phys. , 102 : 054515
  • Honda , K. , Sakai , A. , Sakashita , M. , Ikeda , H. , Zaima , S. and Yasuda , Y. 2004 . Pulsed laser deposition and analysis for structural and electrical properties of HfO2-TiO2 composite films . Jpn. J. Appl. Phys. , 43 : 1571 – 1576 .
  • Kidchob , T. , Falcaro , P. , Schiavuta , P. , Enzo , S. and Innocenzi , P. 2008 . Formation of monoclinic hafnium titanate thin films via the sol-gel method . J. Am. Ceram. Soc. , 91 : 2112 – 2116 .
  • Cisneros-Morales , M. C. and Aita , C. R. 2008 . Mixed cation phases in sputter deposited HfO2-TiO2 nanolaminates . Appl. Phys. Lett. , 93 : 021915
  • Mikhelashvili , V. , Eisenstein , G. , Thangadurai , P. , Kaplan , W. D. , Brener , R. and Saguy , C. 2008 . The use of nanolaminates to obtain structurally stable high-K films with superior electrical properties: HfNO-HfTiO . J. Appl. Phys. , 103 : 114106

Reprints and Corporate Permissions

Please note: Selecting permissions does not provide access to the full text of the article, please see our help page How do I view content?

To request a reprint or corporate permissions for this article, please click on the relevant link below:

Order Reprints Request Corporate Permissions

Academic Permissions

Please note: Selecting permissions does not provide access to the full text of the article, please see our help page How do I view content?

Obtain permissions instantly via Rightslink by clicking on the button below:

Request Academic Permissions

If you are unable to obtain permissions via Rightslink, please complete and submit this Permissions form. For more information, please visit our Permissions help page.

Related research

People also read lists articles that other readers of this article have read.

Recommended articles lists articles that we recommend and is powered by our AI driven recommendation engine.

Cited by lists all citing articles based on Crossref citations.
Articles with the Crossref icon will open in a new tab.