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Ferroelectrics Volume 410, 2010 - Issue 1
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SECTION L: MEMORY, MEMS AND OTHER INTEGRATED DEVICES

Influence of Nitrogen Doping upon the Phase Change Characteristics and Optical Band Gap of Sb2Te3 Thin Films

Changzhou Wang Functional Materials Research Laboratory, Tongji University, Shanghai, 200092, China
,
Jiwei Zhai Functional Materials Research Laboratory, Tongji University, Shanghai, 200092, China
&
Xi Yao Functional Materials Research Laboratory, Tongji University, Shanghai, 200092, China
Pages 152-158 | Received 23 Aug 2009, Accepted 28 Sep 2009, Published online: 20 Jan 2011

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