Buckling Effect Induced Abnormal Out of Plane Domain Stripe in BiFeO₃ Single-Crystalline Thin Film Investigated by Piezoresponse Force Microscopy

References

• S. Katayama, Y. Noguchi and M. Miyayama, 3D Domain Structure in Bi4Ti3O12 Crystals Observed by Using Piezoresponse Force Microscopy. Adv. Mater. 19: 2552–2555 2007.
   Web of Science ®Google Scholar
• A Gruverman and A Kholkin, Nanoscale ferroelectrics: processing, characterization and future trends Rep. Prog. Phys. 69: 2443–2474 2006.
   Web of Science ®Google Scholar
• Dragan Damjanovic, Ferroelectric, dielectric and piezoelectric properties of ferroelectric thin films and ceramics. Rep. Prog. Phys. 61: 1267–1324 1998.
   Web of Science ®Google Scholar
• A. Gruverman, D. Wu, H. Lu, Y. Wang, H. W. Jang, C. M. Folkman, M. Ye. Zhuravlev, D. Felker, M. Rzchowski, C.-B. Eom and E. Y. Tsymbal, Tunneling Electroresistance Effect in Ferroelectric Tunnel Junctions at the Nanoscale Nano Lett. 9: 3539–3543 2009.
   Google Scholar
• An Quan Jiang, Can Wang, Kui Juan Jin, Xiao Bing Liu, James F. Scott, Cheol Seong Hwang, Ting Ao Tang, Hui Bin Lu and Guo Zhen Yang, A Resistive Memory in Semiconducting BiFeO3 Thin-Film Capacitors. Adv. Mater. 23: 1277–1281 2011.
   PubMed Web of Science ®Google Scholar
• T. Choi, S. Lee, Y. J. Choi, V. Kiryukhin and S.-W. Cheong, Switchable Ferroelectric Diode and Photovoltaic Effect in BiFeO3 Science 324: 63–66 2009.
   PubMed Web of Science ®Google Scholar
• Can Wang, Kui-juan Jin, Zhong-tang Xu, Le Wang, Chen Ge, Hui-bin Lu, Hai-zhong Guo, Meng He and Guo-zhen Yang, Switchable diode effect and ferroelectric resistive switching in epitaxial BiFeO3 thin films. Appl. Phys. Lett. 98: 192901 2011.
   Web of Science ®Google Scholar
• Seidel J.; Martin L. W., He Q., Zhan Q., Chu Y. -H.; Rother A., Hawkridge M. E., Maksymovych P., Yu P., Gajek M., Balke N., Kalinin S. V., Gemming S., Wang F., Catalan G., Scott J. F., Spaldin N. A., Orenstein J. and Ramesh R, Conduction at domain walls in oxide multiferroics. Nat. Mater. 8: 229–234 2009.
   PubMed Web of Science ®Google Scholar
• Christopher T. Nelson, Peng Gao, Jacob R. Jokisaari, Colin Heikes, Carolina Adamo, Alexander Melville, Seung-Hyub Baek, Chad M. Folkman, Benjamin Winchester, Yijia Gu, Yuanming Liu, Kui Zhang, Enge Wang, Jiangyu Li, Long-Qing Chen, Chang-Beom Eom, Darrell G. Schlom and Xiaoqing Pan, Domain Dynamics During Ferroelectric Switching. Science 334: 968–971 2011.
   PubMed Web of Science ®Google Scholar
• Elisabeth Soergel, Piezoresponse force microscopy (PFM). J. Phys. D: Appl. Phys. 44: 464003 2011.
   Web of Science ®Google Scholar
• K. Seal, S. Jesse, B. J. Rodriguez, A. P. Baddorf and S. V. Kalinin, High frequency piezoresponse force microscopy in the 1 – 10 MHz regime Appl. Phys. Lett. 91: 232904 2007.
   Web of Science ®Google Scholar
• Jungwon Woo, Seungbum Hong, Nava Setter, Hyunjung Shin, Jong-Up Jeon, Y. Eugene Pak and Kwangsoo No, Quantitative analysis of the bit size dependence on the pulse width and pulse voltage in ferroelectric memory devices using atomic force microscopy. J. Vac. Sci. Technol. B 19: 818–824 2001.
   Web of Science ®Google Scholar
• Wenbo Wang, Yanan Geng and Weida Wu, Background-free piezoresponse force microscopy for quantitative measurements. Appl. Phys. Lett. 104: 072905 2014.
   Web of Science ®Google Scholar
• Stephen Jesse, Ho Nyung Lee and Sergei V. Kalinin: Quantitative mapping of switching behavior in piezoresponse force microscopy. Rev. Sci. Instrum. 77: 073702 2006.
   Web of Science ®Google Scholar
• Seungbum Hong, Jungwon Woo, Hyunjung Shin, Jong Up Jeon, Y. Eugene Pak, Enrico L. Colla, Nava Setter, Eunah Kim and Kwangsoo No, Principle of ferroelectric domain imaging using atomic force microscope. J. Appl. Phys. 89: 1377–1386 2001.
   Google Scholar
• Tobias Jungk, Ákos Hoffmann and Elisabeth Soergel, Quantitative analysis of ferroelectric domain imaging with piezoresponse force microscopy. Appl. Phys. Lett. 89: 163507 2006.
   Web of Science ®Google Scholar
• Rui Guo, Lu You, Lang Chen, Di Wu and Junling Wang, Photovoltaic property of BiFeO3 thin films with 109° domains. Appl. Phys. Lett. 99: 122902 2011.
   Web of Science ®Google Scholar
• N A Pertsev, A Petraru, H Kohlstedt, RWaser, I K Bdikin and DKiselev, A L Kholkin, Dynamics of ferroelectric nanodomains in BaTiO3 epitaxial thin films via piezoresponse force microscopy. Nanotechnology 19:375703 2008.
   PubMed Web of Science ®Google Scholar
• Seungbum Hong, Jeffrey A. Klug, Moonkyu Park, Alexandra Imre, Michael J. Bedzyk, Kwangsoo No, Amanda Petford-Long and Orlando Auciello, Nanoscale piezoresponse studies of ferroelectric domains in epitaxial BiFeO3 nanostructures J. Appl. Phys. 105: 061619 2009.
   Google Scholar
• F. Zavaliche, R. R. Das, D. M. Kim, C. B. Eom, S. Y. Yang, P. Shafer and R. Ramesh, Ferroelectric domain structure in epitaxial BiFeO3 films. Appl. Phys. Lett. 87: 182912 2005.
   Web of Science ®Google Scholar
• F. Zavaliche, P. Shafer, R. Ramesh, M. P. Cruz, R. R. Das, D. M. Kim and C. B. Eom, Polarization switching in epitaxial BiFeO3 films Appl. Phys. Lett. 87: 252902 2005.
   Google Scholar
• Sergei V. Kalinin, Alexei Gruverman and Dawn A. Bonnell, Quantitative analysis of nanoscale switching in SrBi2Ta2O9 thin filmsby piezoresponse force microscopy. Appl. Phys. Lett. 85: 795–797 2004.
   Web of Science ®Google Scholar