Leakage currents in porous PZT films

References

• N. Setter, D. Damjanovic, L. Eng, G. Fox, S. Gevorgian, S. Hong, A. Kingon, H. Kohlstedt, N. Y. Park, G. B. Stephenson, I. Stolitchnov, A. K. Taganstev, D. V. Taylor, T. Yamada, and S. Streiffer, Ferroelectric thin films: Review of materials, properties, and applications. J. Appl. Phys. 100, 051606-1–46 (2006).
   Web of Science ®Google Scholar
• A. Masuda, Y. Yamanaka, M. Tazoe, Y. Yonezawa, A. Morimoto, and T. Shimizu, Highly oriented Pb(Zr,Ti)O3 thin films prepared by pulsed laser ablation on GaAs and Si substrates with MgO buffer layer. Jap. J. Appl. Phys. 34, 5154–5157 (1995).
   Web of Science ®Google Scholar
• E. Hong, J. C. Shin, J. Choi, C. S. Hwanga, and H. J. Kima, Preparation and characterization of Pb(Zr,Ti)O3 thin films by metalorganic chemical vapor deposition using a solid delivery system. J. Mater. Res. 15, 1284–1290 (2000).
   Web of Science ®Google Scholar
• I. Kanno, H. Kotera, K. Wasa, T. Matsunaga, T. Kamada, and R. Takayama, Crystallographic characterization of epitaxial Pb(Zr,Ti)O3 films with different Zr/Ti ratio grown by radio-frequency-magnetron sputtering. J. Appl. Phys. 93, 4091–4096 (2003).
   Web of Science ®Google Scholar
• H. Kozuka, S. Takenaka, H. Tokita, and M. Okubayashi, PVP-assisted sol-gel deposition of single layer ferroelectric thin films over submicron or micron in thickness. J. Europ. Ceram. Soc. 24, 1585–1588 (2004).
   Web of Science ®Google Scholar
• A. Yamano, K. Takata, and H. Kozuka, Ferroelectric domain structures of 0.4-μm-thick Pb(Zr,Ti)O3 films prepared by polyvinylpyrrolidone-assisted sol-gel method. J. Appl. Phys. 111, 054109-1–5 (2012).
   Web of Science ®Google Scholar
• V. Stancu, M. Lisca, I. Boerasu, L. Pintilie, and M. Kosec, Effects of porosity on ferroelectric properties of Pb(Zr0.2Ti0.8)O3 films. Thin Solid Films 515, 6557–6561 (2007).
   Web of Science ®Google Scholar
• Z. H. Du, and J. Ma, The effect of PVP on the critical thickness and properties of PLZT ceramic films. J. Electroceram. 16, 565–569 (2006).
   Web of Science ®Google Scholar
• D. S. Seregin, K. A. Vorotilov, A. S. Sigov, E. N. Zubkova, D. A. Abdullaev, N. M. Kotova, and A. S. Vishnevskiy, Formation and properties of porous films of lead zirconate titanate. Phys. Solid State 57, 499–502 (2015).
   Web of Science ®Google Scholar
• N. M. Kotova, K. A. Vorotilov, D. S. Seregin, and A. S. Sigov, Role of precursors in the formation of lead zirconate titanate thin films. Inorg. Mat. 50, 612–616 (2014).
   Web of Science ®Google Scholar
• K. Vorotilov, A. Sigov, D. Seregin, Yu. Podgorny, O. Zhigalina, and D. Khmelenin, Crystallization behaviour of PZT in multilayer heterostructures. Phase Trans. 86, 1152–1165 (2013).
   Web of Science ®Google Scholar
• A. Sigov, Yu. Podgorny, K. Vorotilov, and A. Vishnevskiy, Leakage currents in ferroelectric thin films. Phase Trans. 86, 1141–1151 (2013).
   Web of Science ®Google Scholar
• Yu. V. Podgorny, K. A. Vorotrilov, and A. S. Sigov, Leakage currents in thin ferroelectric films. Phys. Solid State 54, 911–914 (2012).
   Web of Science ®Google Scholar
• H.-M. Chen, S.-W. Tsaur, and J. Y.-M. Lee, Leakage current characteristics of lead-zirconate-titanate thin film capacitors for memory device applications. Jap. J. Appl. Phys. 37, 4056–4060 (1998).
   Web of Science ®Google Scholar
• J. F. Scott, В. M. Melnick, J. D. Cuchiaro, R. Zuleeg, C. A. Araujo, L. D. McMillan, and M.C. Scott, Negative differential resistivity in ferroelectric thin-film current-voltage relationships. Integr. Ferroelectrics 4, 85–92 (1994).
   Google Scholar
• A. K. Maity, J. Y.-M. Lee, A. Sen, and H. S. Maiti, Negative differential resistance in ferroelectric lead zirconate titanate thin films: influence of interband tunneling on leakage current. Jap. J. Appl. Phys. 43, 7155–7158 (2004).
   Web of Science ®Google Scholar
• M. Dawber, and J. F. Scott, Negative differential resistivity and positive temperature coefficient of resistivity effect in the diffusion-limited current of ferroelectric thin film capacitors. J. Phys.: Cond. Matt. 16, L515–L521 (2004).
   Web of Science ®Google Scholar
• Yu. Podgorny, K. Vorotilov, and A. Sigov, Negative differential conductivity in thin ferroelectric films. Appl. Phys. Lett. 105, 182904-1–5 (2014).
   Web of Science ®Google Scholar
• J. F. Scott, There's no place like Ohm: conduction in oxide thin films. J. Phys.: Condens. Matter 26, 142202-1–4 (2014).
   Web of Science ®Google Scholar
• Yu. Podgorny, A. Sigov, A. Vishnevskiy, and K. Vorotilov, Simulation of negative differential resistivity in thin ferroelectric films. Ferroelectrics 465, 28–35 (2014).
   Web of Science ®Google Scholar
• W. Weibull, A statistical distribution function of wide applicability. J. Appl. Mech. 9, 293–297 (1951).
   Google Scholar
• H. N. Al-Shareef, and D. Dimos, Leakage and reliability characteristics of lead zirconate titanate thin-film capacitors. J. Am. Cer. Soc. 80, 3127–3132 (1997).
   Web of Science ®Google Scholar
• S. Sze, and K. Ng. Kwok, Physics of Semiconductor Devices, John Wiley & Sons, Inc., Hoboken, New Jersey. 2007.
   Google Scholar
• R. Waser, T. Baiatu, and K.-H. Hardtl, DC electrical degradation of perovskite-type titanates: I-III. J. Am. Cer. Soc. 73, 1645–1673 (1990).
   Web of Science ®Google Scholar