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Ferroelectrics Volume 572, 2021 - Issue 1
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Research Article

Energy storage and dielectric properties of PLZST-based antiferroelectric ceramics doped with BiNbO4

Yunfei Zhua State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China;b Collaboration Innovation Center of Electronic Materials and Devices, University of Electronic Science and Technology of China, Chengdu, ChinaView further author information
,
Hongwei Chena State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China;b Collaboration Innovation Center of Electronic Materials and Devices, University of Electronic Science and Technology of China, Chengdu, ChinaCorrespondence[email protected] [email protected]
View further author information
,
Meng Weia State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China;b Collaboration Innovation Center of Electronic Materials and Devices, University of Electronic Science and Technology of China, Chengdu, ChinaView further author information
,
Libin Gaoa State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China;b Collaboration Innovation Center of Electronic Materials and Devices, University of Electronic Science and Technology of China, Chengdu, ChinaView further author information
,
Jinyu Zhaoa State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China;b Collaboration Innovation Center of Electronic Materials and Devices, University of Electronic Science and Technology of China, Chengdu, ChinaView further author information
&
Jihua Zhanga State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China;b Collaboration Innovation Center of Electronic Materials and Devices, University of Electronic Science and Technology of China, Chengdu, ChinaCorrespondence[email protected] [email protected]
View further author information
Pages 1-12 | Received 16 Mar 2020, Accepted 12 Jul 2020, Published online: 09 Mar 2021

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