Enhancing current spreading performance of GaN-based ultraviolet light-emitting diode chips through periodic doping composite barrier structures

References

• W. Yue et al., 395 nm Light-emitting diode with 647 mW output power realized using a double p-type aluminum composition gradient with polarization-induced hole doping, Integr. Ferroelectr. 213 (1), 174 (2021). DOI: 10.1080/10584587.2020.1859836.
   Web of Science ®Google Scholar
• S. Ahmad et al., Modeling and simulation of GaN based QW LED for UV emission, Optik 158, 1334 (2018). DOI: 10.1016/j.ijleo.2018.01.023.
   Web of Science ®Google Scholar
• H. Hu et al., Effects of GaN/AlGaN/Sputtered AlN nucleation layers on performance of GaN-based ultraviolet light-emitting diodes, Sci. Rep. 7 (1), 44627 (2017). DOI: 10.1038/srep44627.
   PubMedGoogle Scholar
• J. Wu et al., Increasing the carrier injection efficiency of gan-based ultraviolet light-emitting diodes by double al composition gradient last quantum barrier and p-type hole supply layer, IEEE Photon. J. 13 (2), 1 (2021). DOI: 10.1109/JPHOT.2021.3058651.
   Web of Science ®Google Scholar
• D. Chen et al., GaN-based micro-light-emitting diode driven by a monolithic integrated ultraviolet phototransistor, IEEE Electron. Device Lett. 43 (1), 80 (2022). DOI: 10.1109/LED.2021.3131375.
   Web of Science ®Google Scholar
• I. Y. Evstratov et al., Current crowding effects on blue LED operation, Phys. Status Solidi (C) 3 (6), 1645 (2006). DOI: 10.1002/pssc.200565417.
   Google Scholar
• C. Huh et al., Improvement in light-output efficiency of InGaN/GaN multiple-quantum well light-emitting diodes by current blocking layer, J. Appl. Phys. 92 (5), 2248 (2002). DOI: 10.1063/1.1497467.
   Web of Science ®Google Scholar
• Q. Chen et al., Enhanced optical performance of AlGaN-based deep ultraviolet light-emitting diodes by electrode patterns design, IEEE Electron. Device Lett. 40 (12), 1925 (2019). DOI: 10.1109/LED.2019.2948952.
   Web of Science ®Google Scholar
• X. Guo, and E. F. Schubert, Current crowding in GaN/InGaN light emitting diodes on insulating substrates, J. Appl. Phys. 90 (8), 4191 (2001). DOI: 10.1063/1.1403665.
   Web of Science ®Google Scholar
• Y. Wang et al., Using a multi-layer stacked AlGaN/GaN structure to improve the current spreading performance of ultraviolet light-emitting diodes, Materials 13 (2), 454 (2020). DOI: 10.3390/ma13020454.
   PubMed Web of Science ®Google Scholar
• L. Wang et al., Current Crowding Phenomenon: Theoretical and Direct Correlation With the Efficiency Droop of Light Emitting Diodes by a Modified ABC Model, IEEE J. Quant. Electron. 51 (5), 1 (2015).
   Web of Science ®Google Scholar
• E. Jung, and H. Kim, Rapid optical degradation of GaN-based light-emitting diodes by a current-crowding-induced self-accelerating thermal process, IEEE Trans. Electron Devices 61 (3), 825 (2014). DOI: 10.1109/TED.2013.2297340.
   Web of Science ®Google Scholar
• C. H. Kuo et al., Nitride-based near-ultraviolet LEDs with an ITO transparent contact, Mater. Sci. Eng. B 106 (1), 69 (2004). DOI: 10.1016/j.mseb.2003.09.018.
   Google Scholar
• J. S. Park et al., Use of a patterned current blocking layer to enhance the light output power of InGaN-based light-emitting diodes, Opt. Express 25 (15), 17556 (2017). DOI: 10.1364/OE.25.017556.
   PubMed Web of Science ®Google Scholar
• J. Che et al., Doping-induced energy barriers to improve the current spreading effect for AlGaN-based ultraviolet-B light-emitting diodes, IEEE Electron. Device Lett. 41 (7), 1 (2020). DOI: 10.1109/LED.2020.2997476.
   Web of Science ®Google Scholar
• Z. H. Zhang et al., Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer, Opt. Express 21 (4), 4958 (2013). DOI: 10.1364/OE.21.004958.
   PubMed Web of Science ®Google Scholar
• X. Guo, and E. F. Schubert, Current crowding and optical saturation effects in GaInN/GaN light-emitting diodes grown on insulating substrates, Appl. Phys. Lett. 78 (21), 3337 (2001). DOI: 10.1063/1.1372359.
   Web of Science ®Google Scholar
• S. J. Wang et al., The use of transparent conducting indium-zinc oxide film as a current spreading layer for vertical-structured high-power GaN-based light-emitting diodes, IEEE Photon. Technol. Lett. 18 (10), 1146 (2006).
   Google Scholar
• J. Che et al., On the p-AlGaN/n-AlGaN/p-AlGaN current spreading layer for AlGaN-based deep ultraviolet light-emitting diodes, Nanoscale Res. Lett. 13 (1), 355 (2018). DOI: 10.1186/s11671-018-2776-y.
   PubMedGoogle Scholar
• W. Liu, S. Yuan, and X. Fan, Suppression of hole leakage by increasing thickness of the first AlGaN barrier layer for GaN/AlGaN ultraviolet light-emitting diode, Phys. Lett. A 408, 127471 (2021). DOI: 10.1016/j.physleta.2021.127471.
   Web of Science ®Google Scholar