A novel SOI MESFET to spread the potential contours towards the drain

References

• Anvarifard, M. K. (2016). Increase in the scattering of electric field lines in a new high voltage SOI MESFET. Superlattices and Microstructures, 97, 15–27.
   Web of Science ®Google Scholar
• Braga, N., & Hiu Yung Wong, R. V. M., “A physical model of the abnormal behavior of hydrogen-terminated diamond MESFET,” 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD); Kamakura, Japan. 2017. pp. 333–336.
   Google Scholar
• Colinge, C. A., & Colinge, J. P. (2005). Physics of semiconductor devices. Springer US.
   Google Scholar
• Deng, X. C., Sun, H., Rao, C. Y., & Zhang, B. (2013). High-power SiC MESFET using a dual p-buffer layer for an S-band power amplifier. Chinese Physics B, 22(1), 017302.
   Web of Science ®Google Scholar
• Dutta, S. (2016). A theoretical study on the linearity of the Id-T curve of a SiC MESFET for sensor application. Superlattices and Microstructures, 101, 446–454.
   Web of Science ®Google Scholar
• Elahipanah, H. (2010). Simulation and optimization of high breakdown double-recessed 4H-SiC MESFET with metal plate termination technique. Superlattices and Microstructures, 48(6), 529–540.
   Web of Science ®Google Scholar
• Ervin, J., Balijepalli, A., Joshi, P., Kushner, V., Yang, J., & Thornton, T. J. (2006). CMOS-compatible SOI MESFETs with high breakdown voltage. IEEE Transactions on Electron Devices, 53(12), 3129–3134.
   Web of Science ®Google Scholar
• Ghyselen, B., Hartmann, J.-M., Ernst, T., Aulnette, C., Osternaud, B., Bogumilowicz, Y., … Mazure, C. (2004). Engineering strained silicon on insulator wafers with the Smart Cut TM technology. Solid. State. Electron, 48, 1285–1296.
   Web of Science ®Google Scholar
• Gu, B., Liu, H., Mai, Y., Feng, X., & Yu, S. (2008). Fracture mechanics analysis of the effects of temperature and material mismatch on the Smart-Cut Ò technology. Engineering Fracture Mechanics, 75(17), 4996–5006.
   Web of Science ®Google Scholar
• Jia, H., et al. (2015). Improved clival gate 4H-SiC MESFET with recessed drain drift region and recessed P-buffer layer (Vol. Iceem, pp. 44–47), Phuket, Thailand.
   Google Scholar
• Jia, H., Hu, M., & Zhu, S. (2018). An improved UU-MESFET with high power added efficiency. Micromachines Artic, 9, 573.
   Google Scholar
• Jia, H., Yang, Y., & Zhang, H. (2013). Improved L-gate 4H-SiC MESFETs with partial p-type spacer. Materials Science in Semiconductor Processing, 16(2), 352–355.
   Web of Science ®Google Scholar
• Jia, H., Zhang, H., Xing, D., Luo, Y., & Duan, B. (2015). A novel 4H-SiC MESFET with ultrahigh upper gate. Superlattices and Microstructures, 86(July), 372–378.
   Web of Science ®Google Scholar
• Jia, H., Zhang, H., Xing, D., & Ma, P. (2015). Improved performance of 4H-SiC MESFETs with Γ-gate and recessed p-buffer layer. Superlattices and Microstructures, 85, 551–556.
   Web of Science ®Google Scholar
• Jiangang, D. J. Y., & Du, W. H. K. (2004). Single crystal 6H-SiC MEMS fabrication based on smart-cut technique. J. Micromechanics Microengineering, 112, 116–121.
   Google Scholar
• Lakhdar, N., & Lakehal, B. (2017). Modeling of submicron triple material GaAs MESFET including the effect of third region length for microwave frequency applications. International Conference on Green Energy and Conversion Systems(GECS); Hammamet, Tunisia, 2017, 1–5.
   Google Scholar
• Li, X., Zhu, M., Du, M., Lv, Z., Zhang, L., Li, Y., … Fang, Y. (2016). High detectivity graphene-silicon heterojunction photodetector. Small, 12(5), 595–601.
   PubMed Web of Science ®Google Scholar
• Mohtaram, M., & Orouji, A. A. (2018). A novel SOI MESFET to improve the equipotential contour distributions by using an oxide barrier. Silicon, 11(2), 879–889.
   Google Scholar
• Na, H. J., Moon, J. H., Yim, J. H., Bin Lee, J., & Kim, H. J. (2006). Fabrication and characterization of 4H-SiC planar MESFETs. Microelectronic Engineering, 83(1 SPEC. ISS.), 160–164.
   Web of Science ®Google Scholar
• Ramezani, Z., Orouji, A. A., & Agharezaei, H. (2016). A novel symmetrical 4H–SiC MESFET: An effective way to improve the breakdown voltage. Journal of Computational Electronics, 15(1), 163–171.
   Web of Science ®Google Scholar
• Richard, M. C., Muller, S., & Theodore, I. K. (2002). Device electronics for integrated circuits (3rd ed.). John Wiley & Sons.
   Google Scholar
• Singh, J. (2000). Semiconductor devices: Basic principles. India: Wiley India Pvt. Limited.
   Google Scholar
• SOFTWARE, D. S. (2016). Device simulator atlas: Atlas user’s manual. Silvaco, Inc. Santa Clara, https://www.silvaco.com
   Google Scholar
• Song, Y., Li, X., Mackin, C., Zhang, X., Fang, W., Palacios, T., Kong, J., (2015). Role of interfacial oxide in high-efficiency graphene-silicon Schottky barrier solar cells. Nano Letters, 15(3), 2104–2110.
   PubMed Web of Science ®Google Scholar
• Sze, S. M. (2002). Semiconductor devices, physics and technology. John Wiley & Sons. Singapore Pte. Limited, 2012.
   Google Scholar
• Tao, L., Chen, Z., Li, X., Yan, K., & Xu, J.-B. (2017). Hybrid graphene tunneling photoconductor with interface engineering towards fast photoresponse and high responsivity. Npj 2D Materials and Applications, 1(1), 19.
   Web of Science ®Google Scholar
• Virdee, B. S., Virdee, A. S., & Banyamin, B. Y. (2004). Broadband microwave amplifiers (Vol. 1). Artech House Microwave Library, Boston.
   Google Scholar