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Original Articles

Dynamic behaviour of double-interdigitated (TIL) GTO thyristors under resistive-inductive loads

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Pages 295-305 | Received 30 Jul 1984, Accepted 20 Aug 1984, Published online: 06 Jul 2010

REFERENCES

  • ADLI-R , M. S. , and WESTBROOK , S. R. , 1982 , Power semiconductor switching devices A comparison based on inductive switching . I.E.E.E. Trans. Electron Devices , 29 , 947 – 952 .
  • BALIGA , B. J. , 1981 , Switching lots of watts at high speeds . I.E.E.E. Spectrum , 18 , 42 – 48 .
  • DUAN , R. H. , and NUESE , C. J. , 1971 , A refined step-recovery technique for measuring minority carrier lifetimes and related parameters in asymmetric p-n junction diodes . I.E.E.E. Trans. Electron Devices , 18 , 151 – 155 .
  • SILARD , A. , 1983 , New developments in the area of gate turn-off thyristors . Proc. Fourth Brazilian Workshop on Microelectronics , pp. 371 – 378 . PROMOCET , Campinas , Sao Paulo .
  • SILARD , A. , 1984a , Increasing iATO in TIL GTO thyristors , Electron. Lett. , 20 , 130 – 132 .
  • SILARD , A. , 1984b , Switching characteristics of 45 A double-interdigitated GTO thyristors . I.E.E.E. Trans. Electron Devices , 3l , 1230 – 1237 .
  • SILARD , A. , 1984c , Electrothermal failure-safety of TIL GTO thyristors . I.E.E.E. Electron Device Lett. , 5 , 338 – 341 .
  • SILARD , A. , and KOSA , B. , 1984 , A novel versatile control circuit for GTO thyristors , Electron. Lett. , 20 ( to be published ).
  • SILARD , A. , and Rusu , S. , 1983a , A novel gate-cathode configuration with two interdigitation levels for GTO thyristors . I.E.E.E. Electron Device Lett. , 4 , 188 – 190 .
  • SILARD , A. ,Rusu, S., 1983b , The TIL GTO thyristor A power switch with unique turn-off features . I.E.E.E. Electron Device Lett. , 4 , 347 – 349 .
  • SILARD , A. , Rusu, §., JURTUDAU , F. , and KOSA , B. , 1984 , A double-interdigitated GTO switch . I.E.E.E. Trans. Electron Devices , 31 , 322 – 328 .
  • SKANADORE , W. R. , 1978 , Methods for utilizing high-speed switching transistors in high-energy switching environments . General Semiconductor Industries Inc. , Tempe , Arizona .

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