Ionization, thermal, and flux dependences of implantation disorder in silicon

References

• Picraux , S. T. , Weisenberger , W. H. and Vook , F. L. 1971 . Rad. Effects , 7 : 101
   Google Scholar
• Vook , F. L. and Stein , H. J. 1970 . Rad. Effects , 6 : 11
   Google Scholar
• Marsden , D. A. , Bellavance , G. R. , Davies , J. A. , Martini , M. and Sigmund , P. 1969 . Phys. Stat. Sol. , 35 : 269
   Web of Science ®Google Scholar
• Marsden , D. A. and Whitton , J. L. 1970 . Rad. Effects , 6 : 181
   Google Scholar
• Stein , H. J. , Vook , F. L. and Borders , J. A. 1970 . Appl. Phys. Letters , 16 : 106
   Web of Science ®Google Scholar
• Brower , K. L. , Vook , F. L. and Borders , J. A. 1970 . Appl. Phys. Letters , 16 : 108
   Web of Science ®Google Scholar
• Davies , J. A. , Denhartog , J. , Eriksson , L. and Mayer , J. W. 1967 . Can. J. Phys. , 45 : 4053
   Web of Science ®Google Scholar
• Stein , H. J. , Vook , F. L. , Brice , D. K. , Borders , J. A. and Picraux , S. T. 1970 . Rad. Effects , 6 : 19
   Google Scholar
• EerNisse , E. P. 1971 . Proceedings of Second International Conference on Ion Implantation in Semiconductors . May 1971 , Garmisch-Partenkirchen, Germany. to be published
   Google Scholar
• Hart , R. R. and Marsh , O. J. 1969 . Appl. Phys. Letters , 15 : 206
   Web of Science ®Google Scholar
• Eisen , F. H. and Welch , B. 1971 . Rad. Effects , 7 : 143
   Google Scholar
• European Conference on Ion Implantation . pp. 227 Stevenage, , England : Peregrinus Ltd. .
   Google Scholar
• Gregory , B. L. and Sander , H. H. 1970 . Proc. IEEE , 58 : 1328 See for example
   Web of Science ®Google Scholar
• Barnes , C. E. 1969 . IEEE Trans. , NS–16 : 28
   Google Scholar
• Eriksson , L. , Davies , J. A. , Johansson , N. G. E. and Mayer , J. W. 1969 . J. Appl. Phys. , 40 : 842
   Web of Science ®Google Scholar
• Picraux , S. T. , Westmoreland , J. E. , Mayer , J. W. , Hart , R. R. and Marsh , O. J. 1969 . Appl. Phys., Letters , 14 : 7
   Web of Science ®Google Scholar
• Westmoreland , J. E. , Mayer , J. W. , Eisen , F. H. and Welch , B. 1969 . Appl. Phys. Letters , 15 : 308
   Web of Science ®Google Scholar
• Brice , D. K. (private communication)
   Google Scholar
• The 'area' technique gives satisfactory relative accuracy foi these measurements. Higher order corrections and their importance are discussed in Ref. 1
   Google Scholar
• Weisenberger , W. H. , Picraux , S. T. and Vook , F. L. 1971 . Rad. Effects , 9 : 121
   Google Scholar
• Eisen , F. H. (private communication)
   Google Scholar
• Lindhard , J. , Nielson , V. , Scharff , M. and Thompsen , P. V. 1963 . Mat. Fys. Medd., Kgl. Danske Videnskab. Selskab , 33 ( 10 )
   Google Scholar
• Seitz , F. and Koehler , J. S. 1956 . Solid State Physics , Edited by: Seitz , F. and Turnbull , D. Vol. 2 , 307 – 402 . N.Y. : Academic Press, Inc. .
   Google Scholar
• Watkins , G. D. 1968 . Radiation Effects in Semiconductors , Edited by: Vook , F. L. 67 N.Y. : Plenum Press, Inc. .
   Google Scholar
• Brower , K. L. 1971 . Rad. Effects , 8 : 213
   Google Scholar
• Mayer , J. W. , Eriksson , L. and Davies , J. A. 1970 . Ion Implantation in Semiconductors , N.Y. : Academic Press .
   Google Scholar
• Bicknell , R. W. and Allen , R. M. 1970 . Rad. Effects , 6 : 45
   Google Scholar
• Sigmund , P. 1969 . Appl. Phys. Letters , 14 : 114
   Web of Science ®Google Scholar
• Brice , D. K. 1970 . Appl. Phys. Letters , 16 : 103
   Web of Science ®Google Scholar
• Stein , H. J. 1967 . J. Appl. Phys. , 38 : 204
   Web of Science ®Google Scholar
• Sattler , A. R. and Vook , F. L. 1967 . Phys. Rev. , 155 : 211
   Web of Science ®Google Scholar
• Stein , H. J. 1967 . Phys. Rev. , 163 : 801
   Web of Science ®Google Scholar
• 1968 . J. Appl. Phys. , 39 : 5283
   Web of Science ®Google Scholar
• 1968 . IEEE Trans. , NS–15 : 69
   Google Scholar
• Brice , D. K. 1970 . Rad. Effects , 6 : 77
   Google Scholar
• Chadderton , L. T. 1971 . Rad. Effects , 8 : 77
   Google Scholar
• B⊘gh , E. , H⊘gild , P. and Stensgaard , I. 1971 . Rad. Effects , 7 : 115
   Google Scholar
• Westmoreland , J. E. , Mayer , J. W. , Eisen , F. H. and Welch , B. 1970 . Rad. Effects , 6 : 161
   Google Scholar
• Hart , R. R. 1970 . Rad. Effects , 6 : 51
   Google Scholar
• Pickar , K. A. and Dalton , J. V. 1970 . Rad. Effects , 6 : 89
   Google Scholar
• Watkins , G. D. 1963 . J. Phys. Soc. Japan , 18 : 22 Suppl. II
   Google Scholar
• Stein , H. J. 1968 . J. Appl. Phys. , 39 : 5283
   Web of Science ®Google Scholar
• Vook , F. L. 1965 . Phys. Rev. , 140 : A2014
   Google Scholar
• Brower , K. L. and Beezhold , W. 1971 . Proceedings of Second International Conference on Ion Implantation in Semiconductors . May 1971 , Garmisch-Partenkirchen, Germany. to be published in
   Google Scholar
• Stein , H. J. , Vook , F. L. and Borders , J. A. 1969 . Appl. Phys. Letters , 14 : 328
   Web of Science ®Google Scholar
• Stein , H. J. 1970 . Rad. Effects , 6 : 175
   Google Scholar
• Vook , F. L. and Stein , H. J. 1969 . Rad. Effects , 2 : 23
   Google Scholar
• Vook , F. L. and Picraux , S. T. 1971 . Proceedings of Second International Conference on Ion Implantation in Semiconductors . May 1971 , Garmisch-Parten-kirchen, Germany. to be published in
   Google Scholar
• Morehead , F. F. and Crowder , B. L. 1970 . Rad. Effects , 6 : 27
   Google Scholar
• Anderson , G. S. and Wehner , G. K. 1964 . Surf. Sci. , 2 : 367
   Web of Science ®Google Scholar
• Hirvonen , J. K. , Brown , W. L. and Glotin , P. M. 1971 . Proceedings of Second International Conference on Ion Implantation in Semiconductors . May 1971 , Garmisch-Partenkirchen, Germany. to be published in
   Google Scholar